Semiconductor structure including dual-side high-density substrate and manufacturing method thereof

Abstract

A semiconductor structure includes a substrate which includes a core layer, a through core via penetrating through the core layer, a first redistribution structure disposed on a side of the core layer, and a second redistribution structure disposed on an opposing side of the core layer and electrically coupled to the first redistribution structure through the through core via. The first redistribution structure includes an outermost dielectric layer, an outermost conductive pattern disposed in and on the outermost dielectric layer and electrically coupled to the through core via, an inner dielectric layer between the outermost dielectric layer and the core layer. An outermost surface of the outermost dielectric layer includes a portion rougher than a surface of the inner dielectric layer facing the outermost dielectric layer.

Images