Semiconductor structure and method of fabricating the same
TW202633434APending Publication Date: 2026-08-01TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
- Filing Date
- 2025-03-17
- Publication Date
- 2026-08-01
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Figure TWG2TA001070038_001 
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Figure TWG2TA001070038_003
Abstract
A semiconductor structure includes a first die and a second die. The first die includes a first substrate, a first interconnection layer, a first inductor pattern and a first bonding layer. The first interconnection layer is disposed on the first substrate. The first inductor pattern is disposed on the first interconnection layer. The first bonding layer includes first bonding pads. The second die is bonded to the first die, and includes a second substrate, a second interconnection layer, a second inductor pattern and a second bonding layer. The second interconnection layer is disposed on the second substrate. The second inductor pattern is disposed on the second interconnection layer. The second bonding layer includes second bonding pads, wherein the second bonding pads are joined with the first bonding pads, and wherein the first inductor pattern is electrically connected to the second inductor pattern through the first and second bonding layers.
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