Semiconductor device and method of manufacturing semiconductor device

Abstract

A laminated semiconductor device (1) with a BSPDN structure is provided, which can be manufactured efficiently and with high yield. The semiconductor device (1) comprises a first semiconductor wafer (5), a TSV wafer (90), and a second semiconductor wafer (110) sequentially laminated; when the direction from the first semiconductor wafer (5) to the TSV wafer (90) is taken as the first direction (1011) and the direction opposite to the first direction (1011) is taken as the second direction (1012), a surface wiring layer (34) is formed on the first direction (1011) side of the first semiconductor wafer (5); an inner power wiring layer (70) is formed on the second direction (1012) side of the first semiconductor wafer (5); a silicon through-hole (91) is formed on the TSV wafer (90); the surface wiring layer (34) is connected to the second semiconductor wafer (110) via the silicon through-hole (91); the second semiconductor wafer (110) has memory or logic functions.

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