Cooling structure for a semiconductor device, and semiconductor device

Abstract

The present invention relates to a cooling structure (10, 10', 10'', 10''') for cooling a semiconductor device, the cooling structure (10, 10', 10'', 10''') comprising a material selected from copper, silicon, stainless steel and diamond, wherein the cooling structure (10, 10', 10'', 10''') includes at least one first channel (14, 14', 14'', 14''', 14iv, 14v, 14vi), the first channel extending from an outer surface (26, 26') of the material in a depth direction and extending along the outer surface in a length direction, wherein the first channel is configured to guide cooling fluid and has a first sidewall and a second sidewall; wherein the first sidewall extends relative to the outer surface at a first angle, and the second sidewall extends relative to the outer surface at a second angle, and the first angle and the second angle deviate from each other by no more than 2∘. The present invention relates to a cooling structure (10, 10’, 10’’, 10’’’) for cooling a semiconductor device, the cooling structure (10, 10’, 10’’, 10’’’) including a material selected from copper, silicon, stainless steel, and diamond, wherein the cooling structure (10, 10’, 10’’, 10’’’) comprises at least a first channel (14, 14’, 14’’, 14’’’, 14iv, 14v, 14vi) that extends from an outer surface (26, 26’) of the material in a depth direction and extends along the outer surface in a length direction, wherein the first channel is configured to guide a cooling fluid and has a first sidewall and a second sidewall; and wherein the first sidewall extends at a first angle relative to the outer surface and the second sidewall extends at a second angle relative to the outer surface and wherein the first and second angle deviate from one another by not more than 2°.

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