Semiconductor structure and manufacturing method thereof
TW202633451APending Publication Date: 2026-08-01TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
- Filing Date
- 2025-05-14
- Publication Date
- 2026-08-01
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Abstract
A semiconductor structure includes: an interconnect structure including a plurality of interconnect layers formed over a substrate and a storage structure in the interconnect structure. The storage structure includes a first electrode, a second electrode, and a first storage layer disposed between the first electrode and the second electrode. The storage structure includes a first portion in a first interconnect layer and a second portion in a second interconnect layer. The semiconductor structure further includes a shield structure disposed in the first interconnect layer and the second interconnect layer of the interconnect structure, wherein the shield structure surrounds the storage structure.
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