Semiconductor device structure and methods for forming the same

Abstract

A device structure may be manufactured by forming a first copper-containing metal interconnect structure embedded in a first dielectric material layer; forming a second dielectric material layer over the first copper-containing metal interconnect structure and the first dielectric material layer; forming a cavity through the second dielectric material layer such that a surface segment of the first copper-containing metal interconnect structure is exposed underneath the cavity; converting a surface portion of the first copper-containing metal interconnect structure into a copper-based tunneling barrier layer; and forming a second copper-containing metal interconnect structure in the cavity on the copper-based tunneling barrier layer.

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