A method for manufacturing a perforated glass substrate for semiconductor packaging, a glass substrate for semiconductor packaging, and a method for manufacturing a perforated glass substrate for semiconductor packaging.

TW202633474APending Publication Date: 2026-08-01NIPPON ELECTRIC GLASS CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
NIPPON ELECTRIC GLASS CO LTD
Filing Date
2025-12-22
Publication Date
2026-08-01

Smart Images

  • Figure TWG2TA001071540_001
    Figure TWG2TA001071540_001
  • Figure TWG2TA001071540_002
    Figure TWG2TA001071540_002
  • Figure TWG2TA001071540_003
    Figure TWG2TA001071540_003
Patent Text Reader

Abstract

The objective of this invention is to provide a perforated glass substrate for semiconductor packaging that can form through-holes with small cone angles and near-straight hole shapes even when using glass containing a large amount of alkali metal components. The perforated glass substrate G1 for semiconductor packaging of this invention includes: a first main surface G1a, a second main surface G1b which is the opposite side of the first main surface G1a, and a through-hole 1 connecting the first main surface G1a and the second main surface G1b. The perforated glass substrate G1 for semiconductor packaging contains, as a glass composition, 55%–75% SiO2, 0%–20% Al2O3, 0%–15% B2O3, 0%–10% Li2O, 5%–20% Na2O, 0%–10% K2O, 0%–10% MgO, 0%–10% CaO, 0%–10% SrO, and 0%–10% BaO, in molar percentages.
Need to check novelty before this filing date? Find Prior Art