Integrated circuit device

Abstract

An integrated circuit device includes a lower insulating film over a substrate, first and second lower metal wiring layers passing through the lower insulating film in a vertical direction and spaced apart from each other with a first local region of the lower insulating film therebetween, an insulating etch stop layer including a first portion covering the first local region, a via jumper contact unit including a first surface contacting the first lower metal wiring layer, a second surface contacting the second lower metal wiring layer, and a third surface between the first and second contact surfaces to contact the first portion of the insulating etch stop layer, and an upper metal wiring layer spaced apart from at least one of the first and second lower metal wiring layers in the vertical direction with the via jumper contact unit therebetween and integrally connected to the via jumper contact unit.

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