device

Abstract

The disclosed electronic device (1) includes a semiconductor substrate (2), a wafer (3), and bumps (4). The coefficient of thermal expansion of the wafer (3) is different from that of the semiconductor substrate (2). The bumps (4) connect bonding pads (21, 31) disposed on the opposing main surfaces of the semiconductor substrate (2) and the wafer (3) to each other. The bumps (4) have a porous metal layer (41) and metal films (42, 43). The metal films (42, 43) are disposed at least between the bonding pads (21) and the porous metal layer (41) of the semiconductor substrate (2) and between the bonding pads (31) and the porous metal layer (41) of the wafer (3), and are disposed on the side of the porous metal layer (41).

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