Gas inlet assembly for epitaxial reactor

Abstract

This invention discloses a gas inlet assembly for a reactor (10) used for epitaxial growth of semiconductor wafers. The gas inlet assembly includes: an inlet (12) for introducing process gas into the reactor (10); and a gas conduit (25) having a first end (26) and a second end (27), the first end (26) being configured to connect to a growth chamber of the reactor (10), and the second end (27) being adjacent to the inlet. (12) configured to provide fluid communication between the inlet (12) and the growth chamber (16); and a sealing device (30) attached to the inlet (12) and the second end (27) of the gas conduit (25) to provide an airtight barrier between the inlet (12) and the second end (27) of the gas conduit (25), the sealing device (30) being configured to allow the second end (27) of the gas conduit (25) to move relative to the inlet (12). A gas inlet assembly for a reactor (10) for epitaxial growth of semiconductor wafers, the gas inlet assembly comprising: an inlet (12) for introduction of process gases into the reactor (10); a gas conduit (25) having a first end (26) arranged to be connected to a growth chamber of the reactor (10) and a second end (27) arranged adjacent to the inlet (12) to provide fluid communication between the inlet (12) and the growth chamber (16); and a sealing device (30) attached to the inlet (12) and to the second end (27) of the gas conduit (25) to provide a gastight barrier therebetween, the sealing device (30) being configured to allow movement of the second end (27) of the gas conduit (25) in relation to the inlet (12).

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