Irregular direct bonded metal (DBM) and connection substrate

TW202633518APending Publication Date: 2026-08-01SEMICON COMPONENTS IND LLC
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Filing Date
2026-01-02
Publication Date
2026-08-01

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Abstract

Described implementations provide an apparatus that includes a conductive portion of a package, including a die attach pad (DAP), a semiconductor die coupled to the DAP, and a direct bonded metal (DBM) substrate including at least a metal layer coupled to a dielectric layer, the semiconductor die and the DAP being included in a first vertical stack separated from a second vertical stack including the DBM substrate.
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