Silicon etchant composition and method for forming patterns using the same

Abstract

This invention relates to a silicon etchant composition and a method for forming patterns using the silicon etchant composition. The silicon etchant composition comprises an amino compound, a pyrazine compound, a basic compound including at least one of organic hydroxides and inorganic hydroxides, and a solvent. In the method of forming the pattern, a silicon-containing layer is formed on a substrate. A silicon protective layer is formed on a portion of the silicon-containing layer. The silicon-containing layer comprises silicon and germanium. The silicon-containing layer is etched using the silicon etchant composition.

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