Diamond wafer fabrication by heteroepitaxy deposition
TW202634096APending Publication Date: 2026-08-16宋健民
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Patent Information
- Application Number
- TW115105223
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-02-14
- Filing Date
- 2026-02-10
- Publication Date
- 2026-08-16
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Abstract
A diamond film is deposited on a substrate by a heteroepitaxy deposition. The substrate is a silicon substrate or a silicon carbide substrate. During the heteroepitaxy deposition, diamond lattices of the diamond film is predominantly based on a silicon lattice of the substrate, and the diamond film has a thickness of less than
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