Dual channel showerhead

TW202634102APending Publication Date: 2026-08-16APPLIED MATERIALS INC
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Patent Information

Application Number
TW114137899
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-10-01
Filing Date
2025-10-01
Publication Date
2026-08-16

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Abstract

A showerhead for a semiconductor processing system is provided. In one aspect, a showerhead includes a body that defines a first gas channel formed, at least in part, by injection holes in fluid communication with a distribution cavity in which a plurality of radially-extending ribs of the body define a plurality of radially-extending passages. A first gas is flowable along the first gas channel so that the first gas injected through the injection holes and into the distribution cavity flows radially along the radially-extending passages and so that at least a portion of the first gas flowing along such passages flows through distribution holes extending to a bottom surface of the body. The body also defines a second gas channel formed by a plurality of through holes so that a second gas is flowable therethrough. The first and second gas channels are fluidly isolated from one another within the showerhead.
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