Spraying apparatus, substrate processing apparatus, substrate processing method, semiconductor device manufacturing method and process products

Abstract

This disclosure provides a technique for increasing the flow area of ​​a gas. The injection device includes a first nozzle and a second nozzle facing a substrate and extending vertically relative to the main surface of the substrate. Each of the first and second nozzles has a front surface continuously formed on the substrate-facing side and a plurality of injection holes disposed on the front surface in a direction parallel to the main surface of the substrate, for injecting gas onto the substrate. Taking the direction from the center of the first and second nozzles toward the center of the substrate as a reference direction, the front surface is formed such that the angles of the normals of the front surface at the locations of the plurality of injection holes relative to the reference direction increase in sequence according to the arrangement of the plurality of injection holes. The injection hole closest to the nozzle opposite to the first or second nozzle among the plurality of injection holes of each of the first and second nozzles is formed on substantially the same tangential plane and injects gas substantially parallel to each other.

Images