Reaction chambers, and ion traps with slanted holes in substrate processing systems

TW202634117APending Publication Date: 2026-08-16ASM IP HLDG BV
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Patent Information

Application Number
TW114139392
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-10-18
Filing Date
2025-10-14
Publication Date
2026-08-16

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Abstract

Ion traps for use in substrate processing systems are disclosed. The ion traps may comprise at least one hole. The hole may comprise an interior surface that is slanted relative to a top surface or a bottom surface of the ion trap. The hole may prevent plasma ions from passing through the ion trap and / or allow plasma radicals to pass through the ion trap.
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