Epitaxial wafers and methods and apparatus for manufacturing epitaxial wafers

Abstract

This invention provides an epitaxial wafer and a method and apparatus for manufacturing an epitaxial wafer. The method for manufacturing an epitaxial wafer includes: providing a substrate wafer and placing it on a base of an epitaxial deposition chamber; during the epitaxial growth process, introducing a growth gas into the epitaxial deposition chamber to grow an epitaxial layer on the surface of the substrate wafer to obtain an epitaxial wafer; wherein, at least during the vapor deposition stage of the epitaxial growth process, the flow rate of the main hydrogen gas in the growth gas is less than 70 slm; and during the cleaning of the chamber, increasing the duration of the coating technology stage to a duration greater than 40 seconds.

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