Method of processing silicon carbide wafers

TW202634136APending Publication Date: 2026-08-16GLOBALWAFERS CO LTD
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Patent Information

Application Number
TW114104631
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-02-07
Publication Date
2026-08-16

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Abstract

A method of processing silicon carbide wafers comprises the following steps. A silicon carbide wafer is provided, the silicon carbide wafer has a first surface and a second surface opposite to the first surface. A laser process is performed on the first surface of the silicon carbide wafer, so as to form a plurality of laser patterns on the first surface of the silicon carbide wafer. An etching process is performed on the first surface of the silicon carbide wafer, so as to remove the plurality of laser patterns from the first surface.
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