Field-effect transistor (FET)-based sensing chip with integrated reference electrode and manufacturing method of an integrated reference electrode

TW202634251APending Publication Date: 2026-08-16NOVASCOPE DIAGNOSTICS INC
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
TW114142051
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-02-14
Filing Date
2025-10-30
Publication Date
2026-08-16

Smart Images

  • Figure TWG2TA001072868_001
    Figure TWG2TA001072868_001
  • Figure TWG2TA001072868_002
    Figure TWG2TA001072868_002
  • Figure TWG2TA001072868_003
    Figure TWG2TA001072868_003
Patent Text Reader

Abstract

A field-effect transistor (FET)-based sensing chip with an integrated reference electrode and a manufacturing method for an integrated reference electrode of an FET-based sensing chip are disclosed. The FET-based sensing chip with an integrated reference electrode provides a multi-layer reference electrode easily formed by common metal process of the semiconductor manufacturing process including sputtering. No rear material or chemical solvents are required. Therefore, practical quantification of the FET-based sensing chip with an integrated reference electrode of the present invention is easily achieved.
Need to check novelty before this filing date? Find Prior Art