Active dual-band liquid crystal transmissive and reflective array structure

Abstract

The present invention provides an active dual-band liquid crystal transmissive and reflective array structure. The structure contains a first substrate layer, a first liquid crystal layer, and a second substrate layer. Each of the first substrate layer and the second substrate layer has four surface units, and components on different surface units are used to form a reflective unit cell unit and a transmissive unit cell unit. When the first liquid crystal layer is not biased, the reflective unit cell can be used as a reflective surface with a

Description

[Technical Field]

[0001] This invention relates to an active dual-frequency liquid crystal transmissive and reflective array structure, and in particular to a liquid crystal adjustable transmissive and reflective array design suitable for 5G millimeter-wave communication bands and low-orbit satellite communication bands. [Previous Technology]

[0002] The array structures commonly found in the literature can be divided into two main categories: passive array structures and array structures in which each unit can be individually controlled.

[0003] Among them, passive array structures can be further divided into single-frequency array structures and dual-frequency array structures. The advantage of passive array structures is that they have excellent performance and stability, but the disadvantage is that they lack adjustability. Since space is always filled with various electromagnetic waves of different frequencies, the disadvantage of passive array structures being unable to be adjusted is amplified infinitely. Passive array structures can no longer meet the needs of operating frequency bands and different beamforming directions.

[0004] Among them, the array structure that can be individually controlled by each unit is limited in size due to the circuit design. Although it has good phase operation capability, its performance is still not comparable to that of the passive array structure, and it cannot achieve the function of beamforming after electromagnetic wave penetration.

[0005] It can be seen that passive array structures and array structures that can be individually controlled by each unit still have their limitations. Therefore, this case is an improvement on the design of dual-frequency penetrating array structure, dual-frequency reflecting array structure, and dual-frequency penetrating-reflecting array structure. Among them, the traditional single-frequency array structure can only achieve beamforming of a single frequency band. The dual-frequency structure using dual-frequency design can achieve beamforming of dual frequencies, but it lacks flexibility in practical application.

[0006] Therefore, this invention utilizes the electromagnetic characteristics of a dual-frequency transmissive-reflective array structure and introduces liquid crystal material to achieve an adjustable effect. This innovation enables the array structure to switch modes according to external conditions and requirements, thereby improving the system's flexibility and adaptability while ensuring performance. Therefore, this invention should be considered the optimal solution. [Summary of the Invention]

[0007] An active dual-frequency liquid crystal transmissive and reflective array structure includes: a first substrate layer having a first upper surface and a first lower surface; a second substrate layer having a second upper surface and a second lower surface; a first liquid crystal layer stacked between the first substrate layer and the second substrate layer; a plurality of first surface units arranged in an array on the first upper surface, each first surface unit having four first surface outer frame patches and a first surface cross-shaped patch, wherein the first surface outer frame patch has a first surface inner frame patch; a plurality of second surface units arranged in an array on the first lower surface, wherein each second surface unit has four second surface rectangular patches, wherein the edges of each second surface rectangular patch are connected to four second surface metal lines, and the center of each second surface rectangular patch has a second surface cross-shaped slot; a plurality of third surface units arranged in an array on the second upper surface, wherein each third surface unit has four third surface rectangular patches, wherein the edges of each third surface rectangular patch are connected to four second surface metal lines. There are four third surface metal lines, and the center of the third surface rectangular patch has a third surface square slot; and several fourth surface units are arranged in an array on the second lower surface, each fourth surface unit being a fourth surface cross-shaped patch; wherein, the first surface outer frame patch, the first surface inner frame patch, the first substrate layer, the four second surface metal lines connecting the edges of the second surface rectangular patch, the first liquid crystal layer, the second substrate layer, and the third surface rectangular patch connecting the edges of the third surface rectangular patch... Four third-surface metal lines form a reflective unit cell. When no bias voltage is applied to the first liquid crystal layer, the center operating frequency of the reflective unit cell is between 27 and 29 GHz. The first surface cross-shaped patch, the first substrate layer, the second surface unit, the first liquid crystal layer, the third surface unit, the second substrate layer, and the fourth surface unit form a transmissive unit cell. When an electromagnetic wave is incident on the first liquid crystal layer after a bias voltage is applied, the center operating frequency of the transmissive unit cell is between 17 and 19 GHz.

[0008] More specifically, each set of four first surface outer frame patches is arranged around the first surface cross-shaped patch, and there is a first surface rectangular slit between the first surface outer frame patch and the first surface inner frame patch, while there is a first surface rectangular slot in the center of the first surface inner frame patch.

[0009] More specifically, each of the four rectangular patches on the second surface is surrounded by a cross-shaped opening on the second surface metal line.

[0010] More specifically, each of the four rectangular patches on the third surface is surrounded by a cross-shaped opening on the third surface metal line.

[0011] More specifically, the first surface unit, the second surface unit, the third surface unit and the fourth surface unit are formed of metal.

[0012] More specifically, before and after the first liquid crystal layer is biased, the dielectric constant of the first liquid crystal layer is 2.55~3.76, and the tangent loss is 0.004~0.006.

[0013] More specifically, the length and width of the first surface outer frame patch are 0.5~3.3mm.

[0014] More specifically, the first surface cross-shaped patch has a first longitudinal portion and a first transverse portion, the length of the first longitudinal portion and the first transverse portion being 1.5~8.5mm.

[0015] More specifically, the second surface cross-shaped slot has a second longitudinal portion and a second transverse portion, the width of the second longitudinal portion and the second transverse portion is 0.57~0.67mm, and the length of the second longitudinal portion and the second transverse portion is 3.25~3.35mm.

[0016] More specifically, when the first liquid crystal layer is not biased, the reflective unit cell can be used as a reflective surface when the center operating frequency is between 27 and 29 GHz; while when the first liquid crystal layer is biased, the transmissive unit cell can be used as a transmissive surface when the center operating frequency is between 17 and 19 GHz.

Implementation Method

[0017] Other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of the preferred embodiments with reference to the accompanying drawings.

[0018] Please refer to Figures 1A and 1B, which are schematic diagrams and cross-sectional diagrams of the multilayer structure of the active dual-frequency liquid crystal transmissive and reflective array structure. As shown in the figures, the active dual-frequency liquid crystal transmissive and reflective array structure is mainly designed as a two-layer, four-sided circuit board. The active dual-frequency liquid crystal transmissive and reflective array structure includes a first substrate layer 1, a first liquid crystal layer 2, and a second substrate layer 3, wherein the first liquid crystal layer 2 is stacked and connected between the first substrate layer 1 and the second substrate layer 3.

[0019] The first substrate layer 1 and the second substrate layer 3 are high-frequency printed circuit boards (dielectric coefficient is 3.25~3.41, tangent loss is 0.002~0.0025, and copper foil thickness is 0.017~0.018mm), but this case is not limited to this type of circuit board.

[0020] The first liquid crystal layer 2, in this embodiment, uses JNC ZOC-A018XX liquid crystal material with a thickness of 0.1mm. Before and after applying a bias voltage, the dielectric constant of this liquid crystal layer is 2.55~3.76 and the tangent loss is 0.004~0.006.

[0021] In order to enable the first liquid crystal layer 2 to be biased, since the first liquid crystal layer 2 is sandwiched between the first substrate layer 1 and the second substrate layer 3, in actual industry implementation, both the first substrate layer 1 and the second substrate layer 3 are designed with a metal edge around their perimeter. Therefore, as long as the bias voltage is applied to the metal edges of the first substrate layer 1 and the second substrate layer 3 above and below the first liquid crystal layer 2, a voltage difference between the top and bottom of the entire liquid crystal layer can be generated. This feature is a well-known technical feature in the industry, so it is not specifically marked in the figure.

[0022] In the preferred embodiment of the first liquid crystal layer 2, before a bias voltage (0V) is applied, its liquid crystal alignment direction is parallel to the electric field direction, and the dielectric constant is 2.55 and the tangent loss is 0.006. After a bias voltage is applied (the applied bias voltage can be 5V~20V), its liquid crystal alignment direction is perpendicular to the electric field, and the dielectric constant becomes 3.76 and the tangent loss is 0.004. However, this invention is not limited to this type of liquid crystal material.

[0023] The first substrate layer 1 has a first upper surface 11 and a first lower surface 12.

[0024] The second substrate layer 3 has a second upper surface 31 and a second lower surface 32.

[0025] As shown in Figure 2A, a plurality of first surface units 111 are formed on the first upper surface 11 in an array. As shown in the figure, the first surface unit 111 has four first surface frame patches 1111 and a first surface cross-shaped patch 1112.

[0026] Wherein, every four first surface outer frame patches 1111 are arranged around the first surface cross-shaped patch 1112, and there is a first surface rectangular slit 1113 between the first surface outer frame patch 1111 and the first surface inner frame patch 1115, and there is a first surface rectangular slot 1114 in the center of the first surface inner frame patch 1115.

[0027] Wherein, the first surface rectangular slit 1113 is larger than the first surface rectangular slot 1114.

[0028] Further, in terms of the preparation process, the first upper surface 11 has multiple rectangular units (Dx is 8mm, Dy is 8mm), and the original metal layer (e.g., copper foil) of the first upper surface 11 is washed away by etching to form multiple first surface units 111 on the first upper surface 11.

[0029] Further, in terms of manufacturing dimensions, as shown in Figure 2A, the surface design of the first surface unit 111 includes a first surface outer frame patch 1111, a first surface cross-shaped patch 1112, a first surface rectangular slit 1113, a first surface rectangular slot 1114, and a first surface inner frame patch 1115.

[0030] The length and width of the first surface outer frame patch 1111 are 0.5~3.3mm (Y).

[0031] The length and width of the rectangular slit 1113 on the first surface are 0.05mm to 0.33mm.

[0032] The length and width of the rectangular slot 1114 on the first surface are 0.25mm to 1.65mm.

[0033] The length and width of the inner frame patch 1115 on the first surface are 0.35mm to 2.31mm.

[0034] The first surface cross-shaped patch 1112 has a first longitudinal portion and a first transverse portion, the length of the first longitudinal portion and the first transverse portion is 1.5~8.5mm (X is 1.5~8.5mm).

[0035] As shown in Figure 2B, a plurality of second surface units 121 arranged in an array are formed on the first lower surface 12. As shown in the figure, each second surface unit 121 has four second surface rectangular patches 1211, wherein the edges of each second surface rectangular patch 1211 are connected to four second surface metal lines 1213, and the center of the second surface rectangular patch 1211 has a second surface cross-shaped slot 1212.

[0036] The position of the cross-shaped slot 1212 on the second surface corresponds to the position of the rectangular slot 1114 on the first surface.

[0037] In this case, every four rectangular patches 1211 on the second surface are surrounded by the metal line 1213 on the second surface to form a cross-shaped opening 1214 on the second surface.

[0038] The position of the cross-shaped opening 1214 on the second surface corresponds to the position of the cross-shaped patch 1112 on the first surface.

[0039] Further, regarding the preparation process, as shown in Figure 2B, the first lower surface 12 has multiple rectangular units (Dx is 8mm, Dy is 8mm), and the original metal layer (e.g., copper foil) of the first lower surface 12 is removed by etching to form multiple second surface units 121 on the first lower surface 12.

[0040] Further, in terms of manufacturing dimensions, the surface design of the second surface unit 121 includes a second surface rectangular patch 1211, a second surface cross-shaped slot 1212, and a second surface metal line 1213.

[0041] The length and width of the rectangular patch 1211 on the second surface are 3.9~4.1mm.

[0042] The second surface cross-shaped slot 1212 has a second longitudinal portion and a second transverse portion. The width of the second longitudinal portion and the second transverse portion is 0.57~0.67mm (B), and the length of the second longitudinal portion and the second transverse portion is 3.25~3.35mm (C).

[0043] The length of the second surface metal line 1213 is 0.3~0.35mm.

[0044] The second surface cross-shaped opening 1214 has a second longitudinal portion and a second transverse portion, the length of which is 4.55~4.62mm.

[0045] As shown in Figure 2C, a plurality of third surface units 311 are formed on the second upper surface 31 in an array. As shown in the figure, each third surface unit 311 has four third surface rectangular patches 3111, wherein the edges of each third surface rectangular patch 3111 are connected to four third surface metal lines 3113, and the center of the third surface rectangular patch 3111 has a third surface square slot 3112.

[0046] The position of the third surface rectangular patch 3111 corresponds to the position of the second surface rectangular patch 1211.

[0047] The position of the square slot 3112 on the third surface corresponds to the position of the cross slot 1212 on the second surface.

[0048] In this case, every four rectangular patches 3111 on the third surface are surrounded by the metal line 3113 on the third surface to form a cross-shaped opening 3114 on the third surface.

[0049] The position of the cross-shaped opening 3114 on the third surface corresponds to the position of the cross-shaped opening 1214 on the second surface.

[0050] Further, regarding the preparation process, as shown in Figure 2C, the second upper surface 31 has multiple rectangular units (Dx is 8mm, Dy is 8mm), and the original metal layer (e.g., copper foil) of the second upper surface 31 is removed by etching to form multiple third surface units 311 on the second upper surface 31.

[0051] Further, in terms of manufacturing dimensions, the third surface unit 311 has a third surface rectangular patch 3111, a third surface square slot 3112, a third surface metal line 3113, and a third surface cross-shaped opening 3114.

[0052] The length and width of the rectangular patch 3111 on the third surface are 2.95~3.05mm (D).

[0053] The length and width of the square slot 3112 on the third surface are 0.85~0.95mm (E).

[0054] The length of the third surface metal line 3113 is 1.6~1.7mm (F).

[0055] The third surface cross-shaped opening 3114 has a third longitudinal portion and a third transverse portion, the length and width of the third longitudinal portion and the third transverse portion being 1.6~1.7mm.

[0056] As shown in Figure 2D, a plurality of fourth surface units are formed on the second lower surface 32 in an array, as shown in the figure. The fourth surface unit is a fourth surface cross-shaped patch 321.

[0057] The position of the fourth surface cross-shaped patch 321 corresponds to the position of the third surface cross-shaped opening 3114.

[0058] Further, regarding the preparation process, as shown in Figure 2D, the second lower surface 32 has multiple rectangular units (Dx is 8mm, Dy is 8mm), and the original metal layer (e.g., copper foil) of the second lower surface 32 is removed by etching to form multiple fourth surface units on the second lower surface 32.

[0059] Further, in terms of manufacturing dimensions, the fourth surface unit is a fourth surface cross-shaped patch 321. The fourth surface cross-shaped patch 321 has a fourth longitudinal portion and a fourth transverse portion. The length of the fourth longitudinal portion and the fourth transverse portion is 1.5~8.5mm (X is 1.5~8.5mm).

[0060] The first surface unit, the second surface unit, the third surface unit and the fourth surface unit are formed of metal material (e.g., copper foil with a thickness of 0.035 mm).

[0061] The first substrate layer 1, the first liquid crystal layer 2 and the second substrate layer 3 are stacked to form the active dual-frequency liquid crystal transmissive and reflective array structure.

[0062] In this design, the corresponding dual patches (here, the dual patches refer to the cross-shaped patch 1112 on the first surface and the cross-shaped patch 321 on the fourth surface) can produce a very wide bandwidth effect in the transmission response, ensuring that S21 and S11 of this design remain stable. The main performance impact of the relevant parameters in this structure is as follows: X and Y are the length dimensions of the variable patches, which determine the angle of the transmission or reflection phase; B determines the bandwidth; and C determines the center frequency of the component.

[0063] The reflective unit cell of this case is composed of a portion of a first substrate layer 1, a first liquid crystal layer 2 and a second substrate layer 3. The size of the reflective unit cell is 4.7 mm, as shown in Figure 3A. The structure is a two-layer substrate design, and both layers use high-frequency printed circuit boards. At this time, the liquid crystal is in an unbiased state (0V).

[0064] The first surface outer frame patch 1111, the first surface inner frame patch 1115, the first substrate layer 1, the second surface rectangular patch 1211 and the four second surface metal lines 1213 connected to the edge of the second surface rectangular patch 1211, the first liquid crystal layer 2, the second substrate layer 3, the third surface rectangular patch 3111 and the four third surface metal lines 3113 connected to the edge of the third surface rectangular patch 3111 form a reflective unit cell. When the first liquid crystal layer 2 is not biased, the center operating frequency of the reflective unit cell is between 27 and 29 GHz, and the wavelength of the operating frequency in this case is related to the unit cell size.

[0065] As shown in Figure 3B, this is a graph of the magnitude and phase change of the S11 reflection coefficient. The Y1 curve represents the reflection coefficient, with the horizontal axis of the solid line representing the change in the Y-size of the patch and the vertical axis representing the reflection coefficient value. The dashed line represents the phase change, with the horizontal axis representing the change in the Y-size of the patch and the vertical axis representing the phase magnitude. The average reflection coefficient of this reflective unit cell is approximately 0.75, and the phase change is also 335 degrees, which meets the performance standards for reflective array design.

[0066] As shown in Figure 3C, before applying a bias voltage, the array structure of this invention can reflect a 28GHz plane electromagnetic wave incident at 30 degrees and focus it at a position of 15 degrees. Furthermore, the incident angle, reflection angle, or transmission angle can all be adjusted as needed.

[0067] The penetrating unit cell of this case consists of four units. The size of the penetrating unit cell is 9.4 mm, as shown in Figure 4A. The structure is a two-layer substrate design, and both layers use high-frequency printed circuit boards.

[0068] The first surface cross-shaped patch 1112, the first substrate layer 1, the second surface unit 121, the first liquid crystal layer 2, the third surface unit 311, the second substrate layer 3 and the fourth surface unit (fourth surface cross-shaped patch 321) form a transmissive unit cell. When an electromagnetic wave is incident on the first liquid crystal layer after a bias voltage is applied, the center operating frequency of the transmissive unit cell is between 17 and 19 GHz.

[0069] As shown in Figure 4B, this is a graph of the S21 penetration coefficient (magnitude) and phase change. The X1 curve represents the penetration coefficient, with the horizontal axis of the solid line representing the change in patch X size and the vertical axis representing the penetration coefficient value. The dashed line represents the phase change, with the horizontal axis representing the change in patch X size and the vertical axis representing the phase magnitude. The average penetration coefficient of this through-hole unit cell is approximately 0.85, and the phase change reaches 335 degrees, meeting the performance standards for through-hole array design.

[0070] As shown in Figure 4C, before the bias voltage is applied, the array structure of this invention can penetrate and focus an 18GHz 30-degree incident plane electromagnetic wave at a position of 0 degrees.

[0071] In practical applications, adjustments need to be made according to the current situation to meet the angle required for phase compensation of each unit.

[0072] As shown in Figure 5A, in this case, the phase compensation diagram obtained after calculation is based on the setting of 30 degrees incident and 15 degrees reflected in the unit cell in the 28GHz band. The figure shows the simulated ideal phase distribution (phase compensation) from 0 to 360 degrees, which is represented by the grayscale color gradient.

[0073] As shown in Figure 5B, in this case, in the 18GHz band, the phase compensation calculated based on the setting of 0 degrees incident and 0 degrees transmitted by the unit cell is shown in the figure. The figure shows the simulated ideal phase distribution (phase compensation) from 0 to 360 degrees, represented by a grayscale color gradient. After obtaining the array unit phase table, we can arrange the required transmissive or reflective arrays according to the unit cell size.

[0074] The phase required for the above phase compensation can be calculated by formula, and the calculation process is known to those with prior knowledge in the field, so it will not be elaborated further.

[0075] There are five implementations in this case. The first and second implementations operate in the Ka-band, while the third, fourth and fifth implementations operate in the Ku-band.

[0076] In the first embodiment of this case, multiple reflective unit cells are arranged, and the average reflectance coefficient is about 0.75 as the patch Y size changes, and the phase change is also greater than 335 degrees, which meets the performance standard of reflective array design.

[0077] The reflective array surfaces are arranged according to this architecture. The incident angle is selected as 30 degrees and the reflection angle is set as 15 degrees for design. The phase quantization formula is used to calculate and obtain the required phase result. Then, it is mapped to the unit cell structure of this design. Finally, the array structure is arranged as shown in Figure 6A.

[0078] As shown in Figure 6A, since the wavelength of 28GHz electromagnetic waves is shorter than that of 18GHz electromagnetic waves, small unit cells (referring to the reflective unit cells mentioned in Figure 3A) will be the incident targets when incident.

[0079] In this case, the incident antenna is rotated 30 degrees clockwise from the Z-axis for incident. It can be observed that when the incident is made at a certain distance (e.g., 300mm) at a 30-degree angle, the reflected beam can be focused at a position with a reflection of 15 degrees.

[0080] As shown in Figure 6B, this is a polar coordinate diagram of the realized gain of this structure with 30-degree incident light and 15-degree reflection; as shown in Figure 6C, this is a diagram of the realized gain (Realized Gain) of this structure with 30-degree incident light and 15-degree reflection. It can be seen from the figures that the realized gain of this structure with 30-degree incident light and 15-degree reflection is 25.7 dB, and the side-lobe-level is approximately 10.7 dB. This demonstrates that this invention exhibits the characteristic of reflected phase beam scanning in the 28 GHz 5G communication band.

[0081] In the second embodiment of this case, multiple reflective unit cells are arranged, and the average reflectance coefficient is about 0.75 as the size of patch Y changes, and the phase change is also greater than 335 degrees, which meets the performance standard of reflective array design.

[0082] The reflective array surfaces are arranged according to this architecture. The incident angle is selected as 30 degrees and the reflection angle is set as 45 degrees for design. The phase quantization formula is used to calculate and obtain the required phase result. Then, it is mapped to the unit cell structure of this design. Finally, the array structure is arranged as shown in Figure 7A.

[0083] As shown in Figure 7A, since the wavelength of 28GHz electromagnetic waves is shorter than that of 18GHz electromagnetic waves, small unit cells (referring to the reflective unit cells mentioned in Figure 3A) will be the incident targets when incident.

[0084] In this case, the incident antenna is rotated 30 degrees clockwise from the Z-axis for incident. It can be observed that when the incident is made at a certain distance (e.g., 300mm) at a 30-degree angle, the reflected beam can be focused at the position of reflection at 45 degrees.

[0085] As shown in Figure 7B, this is a polar coordinate diagram of the realized gain of this structure with 30-degree incident light and 45-degree reflection; as shown in Figure 7C, this is a diagram of the realized gain of this structure with 30-degree incident light and 45-degree reflection. From the figures, it can be seen that the realized gain of this structure with 30-degree incident light and 45-degree reflection is 24.5 dB, and the side-lobe-level is approximately 12.3 dB. This demonstrates that this invention exhibits the characteristic of reflected phase beam scanning in the 28 GHz 5G communication band.

[0086] In the third embodiment of this case, multiple penetrating unit cells are arranged, and the average reflectance coefficient is about 0.85 as the size of the patch X changes, and the phase change also has an effect of more than 335 degrees, which meets the performance standard of penetrating array design.

[0087] The array of penetrating surfaces is arranged according to this architecture. The incident angle is selected as 0 degrees and the transmission angle is set as 0 degrees for design. The phase quantization formula is used to calculate and obtain the required phase result. Then, it is mapped to the unit cell structure of this design. Finally, the array structure is arranged as shown in Figure 8A.

[0088] As shown in Figure 8A, since the wavelength of 18GHz electromagnetic waves is longer than that of 28GHz electromagnetic waves, the large unit cell (referring to the penetrating unit cell mentioned in Figure 4A) will be the incident target when it is incident.

[0089] In this case, the incident antenna is incident at 0 degrees directly above the Z-axis. It can be observed that when the incident antenna is incident at 0 degrees at a certain distance (e.g., 200mm), the beam after penetration can be effectively focused at the position of 0 degrees after penetration.

[0090] As shown in Figure 8B, this is a polar coordinate diagram of the realized gain of this structure at 0° incident and 0° transmitted angles; as shown in Figure 8C, this is a diagram of the realized gain of this structure at 0° incident and 0° transmitted angles. It can be seen from the figures that the realized gain of this structure at 0° incident and 0° transmitted angles is 23.8dB, and the side-lobe-level is approximately 11.8dB. This demonstrates that this invention exhibits the characteristic of penetrating phase beam scanning in the 18GHz low-Earth orbit satellite communication band.

[0091] In the fourth embodiment of this case, multiple penetrating unit cells are arranged, and the average reflectance coefficient is about 0.85 as the size of the patch X changes, and the phase change also has an effect of more than 335 degrees, which meets the performance standard of penetrating array design.

[0092] Based on this architecture, the penetrating array surface is arranged. The incident angle is selected as 30 degrees and the transmission angle is set as 0 degrees for design. The phase quantization formula is used to calculate and obtain the required phase result. Then, it is mapped to the unit cell structure of this design. Finally, the array structure is arranged as shown in Figure 9A.

[0093] As shown in Figure 9A, since the wavelength of 18GHz electromagnetic waves is longer than that of 28GHz electromagnetic waves, the large unit cell (referring to the penetrating unit cell mentioned in Figure 4A) will be the incident target when it is incident.

[0094] In this case, the incident antenna is rotated 30 degrees clockwise from directly above the Z-axis. It can be observed that when the incident antenna is at a certain distance (e.g., 200mm) at a 30-degree angle, the beam after penetration can be effectively focused at the 0-degree position after penetration.

[0095] As shown in Figure 9B, this is a polar coordinate diagram of the realized gain of this structure with 30-degree incident light and 0-degree transmission; as shown in Figure 9C, this is a diagram of the realized gain of this structure with 30-degree incident light and 0-degree transmission. From the figures, it can be seen that the realized gain of this structure with 30-degree incident light and 0-degree transmission is 22.7 dB, and the side-lobe-level is approximately 11.9 dB. This demonstrates that this invention exhibits the characteristic of penetrating phase beam scanning in the 18 GHz low-Earth orbit satellite communication band.

[0096] In the fifth embodiment of this case, multiple penetrating unit cells are arranged, and the average reflectance coefficient is about 0.85 as the size of the patch X changes, and the phase change also has an effect of more than 335 degrees, which meets the performance standard of penetrating array design.

[0097] Based on this architecture, the penetrating array surface is arranged. The incident angle is selected as 45 degrees and the transmission angle is set as 0 degrees for design. The phase quantization formula is used to calculate and obtain the required phase result. Then, it is mapped to the unit cell structure of this design. Finally, the array structure is arranged as shown in Figure 10A.

[0098] As shown in Figure 10A, since the wavelength of 18GHz electromagnetic waves is longer than that of 28GHz electromagnetic waves, the large unit cell (referring to the penetrating unit cell mentioned in Figure 4A) will be the incident target when it is incident.

[0099] In this case, the incident antenna is rotated 45 degrees clockwise from directly above the Z-axis. It can be observed that when the incident antenna is at a certain distance (e.g., 200mm) at a 45-degree angle, the beam after penetration can be effectively focused at the position of 0 degrees after penetration.

[0100] As shown in Figure 10B, this is a polar coordinate diagram of the realized gain of this structure with 45-degree incident angle and 0-degree transmission angle; as shown in Figure 10C, this is a diagram of the realized gain of this structure with 45-degree incident angle and 0-degree transmission angle. It can be seen from the figures that the realized gain of this structure with 45-degree incident angle and 0-degree transmission angle is 20.4 dB, and the side-lobe-level is approximately 10.4 dB. This demonstrates that this invention exhibits the characteristic of penetrating phase beam scanning in the 18 GHz low-Earth orbit satellite communication band.

[0101] The active dual-frequency liquid crystal transmissive and reflective array structure provided by the present invention has the following advantages compared with other conventional technologies: (1) The present invention utilizes the electromagnetic characteristics of the dual-frequency transmissive-reflective array structure and introduces liquid crystal material to achieve an adjustable effect. This innovation enables the array structure to switch modes according to external conditions and requirements, thereby improving the flexibility and adaptability of the system while ensuring performance. (2) The present invention proposes a liquid crystal adjustable transmissive-reflective array design suitable for 5G millimeter-wave communication bands and low-Earth orbit satellite communication bands. This design achieves the effect of switching through liquid crystal. When the liquid crystal is not biased, it is a reflective surface with an operating frequency of Ka-band (28GHz), which can be applied to 5G millimeter-wave communication. When a bias voltage is applied to both ends of the element, it is a transmissive surface with an operating frequency of Ku-band (18GHz), which can be applied to low-Earth orbit satellite communication.

[0102] The present invention has been disclosed above through the above embodiments, but it is not intended to limit the present invention. Any person skilled in the art can make some modifications and refinements after understanding the foregoing technical features and embodiments of the present invention, without departing from the spirit and scope of the present invention. Therefore, the scope of patent protection of the present invention shall be determined by the claims attached to this specification. [Simplified Explanation of the Diagram]

[0103] [Figure 1A] is a schematic diagram of the multilayer structure of the active dual-frequency liquid crystal transmissive and reflective array structure of the present invention. [Figure 1B] is a schematic cross-sectional view of the active dual-frequency liquid crystal transmissive and reflective array structure of the present invention. [Figure 2A] is a schematic diagram of the unit cell design of the first surface unit of the active dual-frequency liquid crystal transmissive and reflective array structure of the present invention. [Figure 2B] is a schematic diagram of the unit cell design of the second surface unit of the active dual-frequency liquid crystal transmissive and reflective array structure of the present invention. [Figure 2C] is a schematic diagram of the unit cell design of the third surface unit of the active dual-frequency liquid crystal transmissive and reflective array structure of the present invention. [Figure 2D] is a schematic diagram of the unit cell design of the fourth surface unit of the active dual-frequency liquid crystal transmissive and reflective array structure of the present invention. [Figure 3A] is a schematic diagram of the structure of the reflective unit cell of the active dual-frequency liquid crystal transmissive and reflective array structure of the present invention. [Figure 3B] is a schematic diagram of the reflection coefficient and phase change of the reflective unit cell of the active dual-frequency liquid crystal transmissive and reflective array structure of the present invention before biasing. [Figure 3C] is a schematic diagram of the performance of the reflective unit cell of the active dual-frequency liquid crystal transmissive and reflective array structure of the present invention before applying bias voltages. [Figure 4A] is a schematic diagram of the structure of the transmissive unit cell of the active dual-frequency liquid crystal transmissive and reflective array structure of the present invention. [Figure 4B] is a schematic diagram of the reflection coefficient and phase change of the transmissive unit cell of the active dual-frequency liquid crystal transmissive and reflective array structure of the present invention after bias voltage. [Figure 4C] is a schematic diagram of the performance of the transmissive unit cell of the active dual-frequency liquid crystal transmissive and reflective array structure of the present invention after applying bias voltages. [Figure 5A] is a schematic diagram of the phase distribution required for unit cell reflection focusing before bias voltage in the active dual-frequency liquid crystal transmissive and reflective array structure of the present invention. [Figure 5B] is a schematic diagram of the phase distribution required for unit cell penetration focusing after bias voltage in the active dual-frequency liquid crystal transmissive and reflective array structure of the present invention. [Figure 6A] is a schematic diagram of the reflective array architecture before bias voltage in the first embodiment of the active dual-frequency liquid crystal transmissive and reflective array structure of the present invention. [Figure 6B] is a polar coordinate diagram of the reflective array before biasing in the first embodiment of the active dual-frequency liquid crystal transmissive and reflective array structure of the present invention. [Figure 6C] is a gain diagram of the reflective array before biasing in the first embodiment of the active dual-frequency liquid crystal transmissive and reflective array structure of the present invention. [Figure 7A] is a schematic diagram of the reflective array architecture before biasing in the second embodiment of the active dual-frequency liquid crystal transmissive and reflective array structure of the present invention. [Figure 7B] is a polar coordinate diagram of the reflective array before biasing in the second embodiment of the active dual-frequency liquid crystal transmissive and reflective array structure of the present invention. [Figure 7C] is a gain diagram of the reflective array before biasing in the second embodiment of the active dual-frequency liquid crystal transmissive and reflective array structure of the present invention. [Figure 8A] is a schematic diagram of the transmissive array architecture after biasing in the third embodiment of the active dual-frequency liquid crystal transmissive and reflective array structure of the present invention.[Figure 8B] is a polar coordinate diagram of the transmission array after biasing in the third embodiment of the active dual-frequency liquid crystal transmission and reflection array structure of the present invention. [Figure 8C] is a gain diagram of the transmission array after biasing in the third embodiment of the active dual-frequency liquid crystal transmission and reflection array structure of the present invention. [Figure 9A] is a schematic diagram of the transmission array architecture after biasing in the fourth embodiment of the active dual-frequency liquid crystal transmission and reflection array structure of the present invention. [Figure 9B] is a polar coordinate diagram of the transmission array after biasing in the fourth embodiment of the active dual-frequency liquid crystal transmission and reflection array structure of the present invention. [Figure 9C] is a gain diagram of the transmission array after biasing in the fourth embodiment of the active dual-frequency liquid crystal transmission and reflection array structure of the present invention. [Figure 10A] is a schematic diagram of the transmission array architecture after biasing in the fifth embodiment of the active dual-frequency liquid crystal transmission and reflection array structure of the present invention. [Figure 10B] is a polar coordinate diagram of the transmission array after biasing in the fifth embodiment of the active dual-frequency liquid crystal transmission and reflection array structure of the present invention. [Figure 10C] is a gain diagram of the transmission array after biasing in the fifth embodiment of the active dual-frequency liquid crystal transmission and reflection array structure of the present invention.

Claims

1. An active dual-frequency liquid crystal transmissive and reflective array structure, comprising: A first substrate layer has a first upper surface and a first lower surface; A second substrate layer having a second upper surface and a second lower surface; A first liquid crystal layer is stacked and connected between the first substrate layer and the second substrate layer; a plurality of first surface units are arranged in an array on the first upper surface, each first surface unit having four first surface outer frame patches and a first surface cross-shaped patch, wherein the first surface outer frame patch has a first surface inner frame patch; a plurality of second surface units are arranged in an array on the first lower surface, wherein each second surface unit has four second surface rectangular patches, wherein the edges of each second surface rectangular patch are connected to four second surface metal lines, and the center of the second surface rectangular patch has a second surface cross-shaped slot. Several third surface units are arranged in an array on the second upper surface, each third surface unit having four third surface rectangular patches, each third surface rectangular patch having four third surface metal lines connected to its edge, and each third surface rectangular patch having a third surface square slot in its center; and several fourth surface units are arranged in an array on the second lower surface, each fourth surface unit being a fourth surface cross-shaped patch; wherein, the first surface outer frame patch, the first surface inner frame patch, the first substrate layer, the second surface rectangular patches and the four second surface metal lines connecting the edges of the second surface rectangular patches, the first liquid crystal layer, the second substrate layer, and the third surface rectangular patches and the four third surface metal lines connecting the edges of the third surface rectangular patches form a reflective unit cell, the center operating frequency of which is between 27 and 29 GHz when no bias voltage is applied to the first liquid crystal layer; The first surface cross-shaped patch, the first substrate layer, the second surface unit, the first liquid crystal layer, the third surface unit, the second substrate layer and the fourth surface unit form a transmissive unit cell. When an electromagnetic wave is incident on the first liquid crystal layer after a bias voltage is applied, the center operating frequency of the transmissive unit cell is between 17 and 19 GHz.

2. The active dual-frequency liquid crystal transmissive and reflective array structure as described in claim 1, wherein every four first surface outer frame patches are arranged around the first surface cross-shaped patch, a first surface rectangular slit is provided between the first surface outer frame patch and the first surface inner frame patch, and a first surface rectangular slot is provided in the center of the first surface inner frame patch.

3. The active dual-frequency liquid crystal transmissive and reflective array structure as described in claim 1, wherein every four rectangular patches on the second surface are surrounded by a cross-shaped opening on the second surface by the metal lines on the second surface.

4. The active dual-frequency liquid crystal transmissive and reflective array structure as described in claim 1, wherein every four rectangular patches on the third surface are surrounded by a cross-shaped opening on the third surface by the metal lines on the third surface.

5. The active dual-frequency liquid crystal transmissive and reflective array structure as described in claim 1, wherein the first surface unit, the second surface unit, the third surface unit and the fourth surface unit are formed of metal.

6. The active dual-frequency liquid crystal transmissive and reflective array structure as described in claim 1, wherein the dielectric constant of the first liquid crystal layer is 2.55~3.76 before and after the first liquid crystal layer is biased, and the tangent loss is 0.004~0.

006.

7. The active dual-frequency liquid crystal transmissive and reflective array structure as described in claim 1, wherein the length and width of the first surface outer frame patch are 0.5~3.3mm.

8. The active dual-frequency liquid crystal transmissive and reflective array structure as described in claim 1, wherein the first surface cross-shaped patch has a first longitudinal portion and a first transverse portion, the length of the first longitudinal portion and the first transverse portion being 1.5~8.5mm.

9. The active dual-frequency liquid crystal transmissive and reflective array structure as described in claim 1, wherein the cross-shaped slot on the second surface has a second longitudinal portion and a second transverse portion, the width of the second longitudinal portion and the second transverse portion is 0.57~0.67mm, and the length of the second longitudinal portion and the second transverse portion is 3.25~3.35mm.

10. The active dual-frequency liquid crystal transmissive and reflective array structure as described in claim 1, wherein when the first liquid crystal layer is not biased, the reflective unit cell can be used as a reflective surface when the center operating frequency is between 27 and 29 GHz; and when the first liquid crystal layer is biased, the transmissive unit cell can be used as a transmissive surface when the center operating frequency is between 17 and 19 GHz.

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