Circuits and methods for generating bias voltages in substrate clamp circuits

Abstract

An electronic device includes a gallium nitride (GaN) substrate having a GaN-based top layer attached to a silicon-based bottom layer, a bidirectional switch formed on the GaN-based top layer and including a first source node, a second source node and a common drain node, a first bias generator circuit arranged to couple the first source node to the silicon-based bottom layer, and a second bias generator circuit arranged to couple the second source node to the silicon-based bottom layer.In one aspect, when a voltage of the first source node is at a higher voltage than the second source node, the first bias generator circuit brings a voltage at the silicon-based bottom layer close to the voltage at the second source node.

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