Plasma treatment equipment and its control methods

Abstract

This invention discloses a plasma processing device and its control method. The plasma processing device includes a reaction chamber and a spray head located at the top of the reaction chamber. A base is provided below the spray head for supporting a wafer. The base is connected to a lower electrode radio frequency source, which provides a first radio frequency to excite plasma in the space between the spray head and the wafer. A moving ring is provided radially outward of the spray head, and a constraint ring is provided radially outward of the base. During the process, the moving ring falls down and cooperates with the constraint ring to constrain the plasma region. The device also includes a moving ring radio frequency assembly, which includes a moving ring radio frequency source. The moving ring radio frequency source is electrically connected to the electrode on the moving ring via a first link to feed a second radio frequency to the moving ring. The second radio frequency has the same frequency and phase as the first radio frequency to limit the plasma region.

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