Memory device and methods of forming the same
TW202634916APending Publication Date: 2026-08-16NAN YA TECH
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Patent Information
- Application Number
- TW114111562
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-02-13
- Filing Date
- 2025-03-26
- Publication Date
- 2026-08-16
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Figure TWG2TA001072411_001 
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Figure TWG2TA001072411_003
Abstract
A memory device includes a substrate and a capacitor structure over the substrate. The capacitor structure comprising: a lower electrode; a capacitor dielectric over the lower electrode and having a first dielectric and a second dielectric over the first dielectric, wherein the first dielectric is made of hafnium oxide and the second dielectric is made of zirconium oxide; and an upper electrode over the second dielectric.
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