Semiconductor devices

Abstract

This invention provides a semiconductor device for improving the uniformity of write voltage. The semiconductor device of one embodiment includes: a first stacked body, which alternately stacks a plurality of first wiring layers and a plurality of first insulating layers along a first direction to form a first hole extending in the first direction and having a portion whose inner diameter varies along the first direction; and a first columnar body extending in the first hole in the first direction, having, in a second direction perpendicular to the first direction, a first semiconductor film, a first tunnel insulating film disposed outside the first semiconductor film, and a first tunnel insulating film disposed outside the first tunnel insulating film, starting from the inner side of the first hole. The first charge accumulation film on the side, and the first barrier insulating film disposed between the first charge accumulation film and the plurality of the first wiring layers and the plurality of the first insulating layers; in the second direction, when the thickness of at least one of the first barrier insulating film, the first charge accumulation film and the first tunnel insulating film is defined as the first film thickness when the inner diameter of the first hole is the first inner diameter, and is defined as the second film thickness when the inner diameter of the first hole is the second inner diameter, when the first inner diameter is larger than the second inner diameter, the first film thickness is smaller than the second film thickness.

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