Memory components and semiconductor components

Abstract

One embodiment provides a memory device and a semiconductor device that improve device reliability. The device of this embodiment includes a transistor comprising: a source / drain layer within a substrate; a gate insulating layer on the substrate; a first gate electrode disposed above a channel region, separated by the gate insulating layer; a second gate electrode disposed above the source / drain layer, separated by the gate insulating layer, adjacent to the first gate electrode across a slit, and having an opening; and an insulating layer disposed within the slit, extending in a direction perpendicular to the surface of the substrate. The gate insulating layer includes a first portion between the first gate electrode and the substrate, and a second portion between the slit and the substrate, the thickness of the second portion being equal to the thickness of the first portion.

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