Magnetic memory

Abstract

This invention provides a magnetic memory with a relatively simple structure that can operate with low current consumption even without an external magnetic field. The magnetic memory of this embodiment includes a first electrode and a second and third electrode arranged at a distance in a first direction. A non-magnetic conductive layer electrically connects the second and third electrodes and extends in the first direction. A first magnetic layer is disposed relative to the non-magnetic conductive layer in a second direction intersecting the first direction. The first magnetic layer extends in the first direction and includes a first region and a second region arranged along the first direction. At least a portion of the first region is disposed in the second direction between the first electrode and the non-magnetic conductive layer. A second magnetic layer is disposed between the first region and the first electrode, and its magnetization direction is fixed along the second direction. A non-magnetic insulating layer is disposed between the first and second magnetic layers. When viewed from the second direction, the first electrode is disposed between the second and third electrodes, at least partially overlapping with the second electrode, or at least partially overlapping with the third electrode. The magnetization direction of region 1 is variable along the second direction mentioned above. The magnetization direction of region 2 is fixed along the first direction.

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