Semiconductor device and method of manufacturing thereof

TW202634949APending Publication Date: 2026-08-16TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Application Number
TW114113486
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-01-31
Filing Date
2025-04-10
Publication Date
2026-08-16

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    Figure TWG2TA001072428_003
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Abstract

A fin structure is formed over a substrate. An insulation feature is formed over the substrate and laterally with respect to the fin structure. A dielectric layer of SiON is formed over the insulation feature and over the fin structure. A dummy gate structure is formed over the insulation feature, and the dielectric layer separates the dummy gate structure from the insulation feature.
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