Wave layout for high electron mobility transistors

Abstract

A semiconductor device is disclosed. The device includes a semiconductor substrate, a semiconductor spacer layer, and a semiconductor barrier layer. The spacer layer is located between the substrate and barrier layer. The spacer layer and barrier layer support formation of a two-dimensional electron gas (2DEG) proximate a heterojunction between the spacer and barrier layers. A high electron mobility transistor (HEMT) structure is formed on the barrier layer. Each cell of the HEMT structure has source contacts between first and second gate structures. The source contacts are island structures rather than continuous stripes. Island structures in adjacent cells are staggered with respect to each other along a width direction. The gate structures divert around the island structures to keep substantially constant spacing from source contacts and to keep substantially constant spacing between corresponding gate structures in cells adjacent to each other along the length direction.

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