Transistor device and manufacturing method thereof

Abstract

A transistor device and a manufacturing method thereof are provided. The transistor device includes: a substrate, a first conductive type epitaxial layer, a second conductive type body region, a second conductive type heavily doped recess and two self-aligned first conductivity type heavily doped region. The first conductive type epitaxial layer is disposed on the substrate, the second conductive type body region is disposed on the first conductive type epitaxial layer, and the second conductive type heavily doped recess is disposed on the second conductive type body region. The two first conductivity type heavily doped regions are self-aligned and disposed on the upper edges of both sides of the second conductivity type heavily doped recess.

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