Semiconductor device and method of manufacturing semiconductor device

Abstract

A semiconductor device is provided that includes a transistor achieving both high field-effect mobility and high reliability. The semiconductor device includes a semiconductor layer, a gate insulating layer, and a gate electrode. The semiconductor layer includes a region overlapping the gate electrode with the gate insulating layer. The semiconductor layer includes a first metal oxide layer, a second metal oxide layer on the first metal oxide layer, and a third metal oxide layer on the second metal oxide layer. The first, second, and third metal oxide layers all contain indium oxide. The second metal oxide layer includes a region with a higher hydrogen concentration than the first and third metal oxide layers.

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