Short channel mosfet devices with low turn-on voltage and their fabrication methods

Abstract

The present invention discloses a low turn-on voltage short channel MOSFET device and its manufacturing method, comprising: sequentially growing an epitaxial layer and a first oxide layer on a silicon wafer; Perform body region injection and source region injection on the upper part of the epitaxial layer; Etching to form gate trenches; Growing a gate oxide layer on the trench wall of the gate trench; Form gate polycrystalline silicon in the gate trench; Complete the subsequent production process. In the present invention, by first injecting into the body region and the source region, and then etching to form a gate trench, it is possible to avoid the situation where the source region is injected too deeply near the gate trench due to the over etching of polycrystalline silicon in the gate trench, resulting in a shorter conductive channel and channel leakage. This makes it possible to mass produce low turn-on voltage short channel MOSFET devices.

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