Semiconductor structures and methods of fabrication thereof

Abstract

Embodiments of the present disclosure provide a method of forming channel stacks for multi-channel devices using laser recrystallization technology. By using laser recrystallization, sacrificial layers in the channel stack may be oxide containing layers, instead of epitaxial layer, i.e. SiGe sacrificial layers. By avoiding SiGe sacrificial layers, Ge segregation to adjacent semiconductor channel layers may be reduced during thermal processing. Tensile strain caused by SiGe sacrificial layers to the Si channel layers may also be reduced. Additionally, embodiments of the present disclosure enable different crystalline orientations in p-channels and n-channels in the CFETs, therefore, improving device performance.

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