Semiconductor device and forming method thereof

Abstract

A method of forming a semiconductor device includes forming a structure having a bottom region and a top region, the bottom region having a first plurality of channels for forming a first type transistor, the top region having a second plurality of channels for forming a second type transistor, where the top and the bottom regions are separated by a channel isolation layer; depositing a first gate metal over the structure and wrapping around each channel of the first and the second plurality of channels; etching back the first gate metal to expose each channel of the second plurality of channels; depositing a gate isolation layer on the etched-back first gate metal, where the gate isolation layer has a dielectric constant lower than

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