Method of fabricating semiconductor device

Abstract

A method of fabricating a semiconductor device includes forming a first gate structure, a second gate structure, a third gate structure, and an insulating structure on a substrate such that the first gate structure, the second gate structure, the third gate structure, and the insulating structure have upper surfaces that are level with each other, wherein the insulating structure is between the first gate structure and the second gate structure; recessing the upper surfaces of the first and second gate structures relative to the upper surfaces of the third gate structure and the insulating structure; forming a cap structure on recessed surfaces of the first and second gate structures; removing the third gate structure to form an opening; and forming a replacement gate structure in the opening, including forming a conductive material in the opening and on upper surfaces of the cap structure on the first and second gate structures.

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