Semiconductor devices

Abstract

The semiconductor device disclosed herein includes: a collector layer (11); a base layer (12) disposed on the collector layer; an emitter layer (14) disposed on the base layer, and having a narrower width than the base layer in a direction intersecting the stacking directions of the collector layer and the base layer to form a mesa structure; a collector electrode (22) electrically connected to the collector layer; an emitter electrode (21) electrically connected to the emitter layer; a base electrode (23) electrically connected to the base layer; and a surface rebonding prevention layer (13) disposed between the emitter layer and the base layer, and forming a layer different from the base layer and the emitter layer. The surface rebonding prevention layer is configured such that it is located between the portion of the base layer facing the emitter layer and the portion facing the base electrode in the stacking direction on the side (12a) of the base layer.

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