Semiconductor structure

Abstract

One aspect of the present disclosure pertains to a semiconductor structure. The semiconductor structure includes a first cell having first active regions extending lengthwise along a first direction; a second cell having second active regions extending lengthwise along the first direction; and gate structures wrapping around transistor channels of the first and the second active regions to form first transistors and second transistors, respectively, the gate structures extend lengthwise across the first and the second cells along a second direction perpendicular to the first direction. Each of the first transistors include a smaller number of transistor channels than each of the second transistors, and each of the first transistors has a greater channel width than each of the second transistors.

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