Semiconductor device

Abstract

A semiconductor device may include: a substrate; an active pattern on the substrate; a source / drain pattern on the active pattern; a channel pattern connected to the source / drain pattern, the channel pattern including semiconductor patterns that are spaced apart from each other; and a gate electrode extending in a first direction such as to cross the channel pattern, wherein the semiconductor patterns include a first semiconductor pattern, a second semiconductor pattern on the first semiconductor pattern, and a third semiconductor pattern on the second semiconductor pattern, wherein the gate electrode includes: a first inner part between the active pattern and the first semiconductor pattern; a second inner part between the first semiconductor pattern and the second semiconductor pattern; and a third inner part between the second semiconductor pattern and the third semiconductor pattern, and wherein a width of the first inner part is a smaller than a width of the second inner part and a width of the third inner part.

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