Semiconducting substrate structure and methods for forming same

Abstract

Methods for forming bias-controlled silicon-on-insulator (SOI) regions are disclosed, along with such substrates and integrated circuits thereon. A trench is formed in a base substrate, and a pickup channel is formed therein. A buried dielectric layer is formed over the pickup channel, and a semiconducting substrate is formed over the buried dielectric layer. A central layer of the pickup channel extends through the buried dielectric layer and is electrically connected to the semiconducting substrate. Other integrated circuits can be formed on the base substrate as well. This results in flexible design layouts.

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