Silicon-on-insulator substrate and its preparation method

Abstract

This invention provides a silicon-on-insulator substrate and a method for preparing the same. The method for preparing the silicon-on-insulator substrate includes: growing a polycrystalline silicon layer on the release surface of a current reusable donor substrate to form a support substrate; bonding the support substrate to a current donor substrate to be bonded via the polycrystalline silicon layer to form a current bonded sheet; and performing a release heat treatment on the current bonded sheet to obtain a silicon-on-insulator substrate and a reusable donor substrate; wherein the current reusable donor substrate is the remaining portion of the previous donor substrate to be bonded used to prepare the previous silicon-on-insulator substrate after the previous release heat treatment.

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