Semiconductor device strucure with reduced keep-out-zone and methods of making the same

TW202635014APending Publication Date: 2026-08-16TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
TW114112509
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-02-12
Filing Date
2025-04-01
Publication Date
2026-08-16

Smart Images

  • Figure TWG2TA001072416_001
    Figure TWG2TA001072416_001
  • Figure TWG2TA001072416_002
    Figure TWG2TA001072416_002
  • Figure TWG2TA001072416_003
    Figure TWG2TA001072416_003
Patent Text Reader

Abstract

µm, which may help shield the semiconductor devices in the first region from stress caused by the TSV. Accordingly, the TSV may not negatively affect performance of nearby semiconductor devices, and the TSV and the semiconductor devices may be located closer to one another (e.g., <
Need to check novelty before this filing date? Find Prior Art