Integrated circuit device and method of fabricating the same

Abstract

An integrated circuit device includes a first cell including a first transistor; and a second cell abutting the first cell at a first cell boundary and including at least a portion of a second circuit. The first cell includes one or more pin layers at the first cell boundary, the one or more pin layers including a highest pin layer, the second circuit is connected to a gate of the first transistor by a first conductive path within the first cell, the first conductive path includes a first conductor in a top-most conductive layer among conductive layers forming the first conductive path within the first cell, the top-most conductive layer being a higher layer than the highest pin layer, and the second circuit includes a second conductor connected to the first conductive path at a first pin conductor in a first pin layer among the one or more pin layers.

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