Integrated circuit device and method of manufacturing the same

Abstract

Some embodiments relate to an integrated circuit (IC) device including a photodetector, a floating diffusion region, a transfer gate structure configured to electrically couple the photodetector to the floating diffusion region, first and second capacitor structures, and first and second transistor structures. The second transistor structure is configured to electrically couple the second capacitor structure to the floating diffusion region. The first transistor structure is configured to electrically couple the first capacitor structure to the second capacitor structure in parallel. One of the first capacitor structure or the second capacitor structure includes at least a portion of a first conductive element and a portion of a second conductive element laterally separated from each other. The other one of the first capacitor structure or the second capacitor structure includes at least a portion of a first conductive element and a portion of a second conductive element vertically separated from each other.

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