Display device

Abstract

A display device has an island region and a bridge region adjacent to the island region, and includes a pixel structure, an organic insulating structure, a first signal line and a second signal line. The pixel structure is disposed in the island region. The organic insulating structure is disposed in the bridge region. The first signal line is disposed in the bridge region and electrically connected to a first signal source. The second signal line is disposed in the bridge region and electrically connected to a second signal source. The first and second signal lines extend from a top surface of the organic insulating structure to two opposite side surfaces of the organic insulating structure respectively.

Description

Technical Field

[0001] This invention relates to an optoelectronic device, and more particularly to a display device. Prior Technology

[0002] As display devices continue to innovate, the characteristics of stretchability, flexibility, and unrestricted shape are gradually gaining importance to meet users' needs for freely stretching or bending display devices. To maximize the stretchability and flexibility of display devices, one current approach is to manufacture pixel units in an island-like shape and use a bridge-like circuit structure to connect the pixel units in pairs.

[0003] Current stretchable display devices employ a bridge-like circuit structure using multiple layers of conductors coated with organic insulating layers. However, due to the limited width of the bridge-like circuit structure, the coating yield of the organic insulating layer degrades with increasing layer count. Furthermore, the conductor width must decrease with increasing layer count, leading to increased impedance and a higher risk of burn-out. Additionally, overlapping power signal lines can cause signal accuracy issues. Summary of the Invention

[0004] One embodiment of the present invention provides a display device having adjacent island areas and bridging areas, and including a pixel structure disposed in the island areas and an organic insulating structure located in the bridging areas. The display device further includes a first signal line and a second signal line located in the bridging areas, wherein the first signal line is electrically connected to a first signal source, and the second signal line is electrically connected to a second signal source, and the first signal line and the second signal line extend from the top surface of the organic insulating structure to two opposite side surfaces of the organic insulating structure, respectively.

[0005] In one embodiment of the present invention, the first signal source and the second signal source have different voltages.

[0006] In one embodiment of the present invention, the first signal line does not overlap with the second signal line in the direction from the top surface of the organic insulating structure to the bottom surface of the organic insulating structure.

[0007] In one embodiment of the present invention, the organic insulating structure includes multiple layers of stacked organic insulating layers, and the individual widths of the multiple organic insulating layers decrease from the bottommost layer to the topmost layer.

[0008] In one embodiment of the present invention, the two opposite surfaces of the organic insulating structure are linear, arc-shaped, or stepped.

[0009] In one embodiment of the present invention, the first signal line and the second signal line are respectively electrically connected to conductive layers stacked along two opposite surfaces of an organic insulating structure.

[0010] In one embodiment of the present invention, the display device further includes a plurality of third signal lines, wherein the plurality of third signal lines are located in an organic insulating structure and are electrically connected to a plurality of signal sources respectively.

[0011] In one embodiment of the present invention, one of the plurality of third signal lines is electrically connected to the first signal line, and another of the plurality of third signal lines is electrically connected to the second signal line.

[0012] In one embodiment of the present invention, one of the plurality of third signal lines is electrically connected to the first signal line through a first via, and the other of the plurality of third signal lines is electrically connected to the second signal line through a second via, wherein the first via and the second via are each independently located in a bridging region or an island region.

[0013] In one embodiment of the present invention, one and the other of the plurality of third signal lines extend along two opposite surfaces of the organic insulating structure, and one of the plurality of third signal lines is sandwiched between the first signal line and one of the two opposite surfaces of the organic insulating structure, and the other of the plurality of third signal lines is sandwiched between the second signal line and the other of the two opposite surfaces of the organic insulating structure.

[0014] To make the above features and advantages of the present invention more apparent and understandable, specific embodiments are described below in conjunction with the accompanying drawings for detailed explanation. Simple Explanation of the Diagram

[0015] Figure 1A is a partial top view schematic diagram of a display device according to an embodiment of the present invention. Figure 1B is a circuit diagram of an embodiment of the pixel structure of the display device of Figure 1A. Figure 1C is a schematic cross-sectional view taken along the section line A-A' of Figure 1A. Figure 1D is a schematic cross-sectional view taken along section line B-B' of Figure 1A. Figure 2 is a partial cross-sectional schematic diagram of the bridging area of ​​a display device according to an embodiment of the present invention. Figure 3A is a partial cross-sectional schematic diagram of the bridging area of ​​a display device according to an embodiment of the present invention. Figure 3B is a partial cross-sectional schematic diagram of the island area of ​​a display device according to an embodiment of the present invention. Figure 4 is a partial cross-sectional schematic diagram of the bridging area of ​​a display device according to an embodiment of the present invention. Figure 5 is a partial cross-sectional schematic diagram of the bridging area of ​​a display device according to an embodiment of the present invention. Figure 6 is a partial cross-sectional schematic diagram of the bridging area of ​​a display device according to an embodiment of the present invention. Figure 7 is a partial cross-sectional schematic diagram of the bridging area of ​​a display device according to an embodiment of the present invention. Figure 8 is a partial cross-sectional schematic diagram of the bridging area of ​​a display device according to an embodiment of the present invention. Figures 9A to 9E are partial cross-sectional schematic diagrams of the steps of a method for manufacturing a display device according to an embodiment of the present invention. Implementation

[0016] Given the specific number of measurements discussed and the associated errors (i.e., limitations of the measurement system), the terms "about," "approximately," or "substantially" as used herein include the value and the average value within an acceptable range of deviations from the specific value as determined by one of ordinary skill in the art. For example, "about" may mean within one or more standard deviations of the value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, the terms "about," "approximately," or "substantially" as used herein may be chosen based on the optical, etched, or other properties to select a more acceptable range of deviations or standard deviations, and may not apply to all properties using a single standard deviation.

[0017] Furthermore, relative terms such as "below" or "bottom" and "above" or "top" may be used herein to describe the relationship between one element and another, as illustrated in the figures. It should be understood that relative terms are intended to include different orientations of the device beyond those shown in the figures. For example, if a device in one figure is flipped, an element described as being "below" the other element will be oriented "above" the other element. Thus, the exemplary term "below" can include both "below" and "above" orientations, depending on the specific orientation of the figure. Similarly, if a device in one figure is flipped, an element described as being "below" or "below" the other element will be oriented "above" the other element. Thus, the exemplary term "below" or "below" can include both "above" and "below" orientations.

[0018] FIG1A is a partial top view of a display device 10 according to an embodiment of the present invention. FIG1B is a circuit diagram of an embodiment of the pixel structure 110 of the display device 10 of FIG1A. FIG1C is a cross-sectional view taken along section line A-A' of FIG1A. FIG1D is a cross-sectional view taken along section line B-B' of FIG1A. Hereinafter, embodiments of the various elements and film layers of the display device 10 will be described in conjunction with FIG1A to FIG1D, but the present invention is not limited thereto.

[0019] Referring to Figure 1A, the display device 10 may have an island area AI and a bridging area AB, wherein the bridging area AB may be adjacent to the island area AI. In some embodiments, the island area AI may have a rectangular outline, but is not limited thereto. In other embodiments, the island area AI may have various geometric outlines as needed, such as circular, polygonal, or irregular shapes. In some embodiments, the bridging area AB has a U-shaped outline, but is not limited thereto. In other embodiments, the bridging area AB may have various geometric outlines as needed, such as S-shaped, V-shaped, or irregular shapes.

[0020] The display device 10 further includes a pixel structure 110 and an organic insulating structure 120, wherein the pixel structure 110 may be disposed in an island area AI, and the organic insulating structure 120 may be disposed in a bridging area AB. In some embodiments, the island area AI may refer to the area where the pixel structure 110 is located, and the bridging area AB may refer to the area where the organic insulating structure 120 is located.

[0021] In some embodiments, the display device 10 has a plurality of island areas AI and a plurality of bridging areas AB. The plurality of bridging areas AB can be located between two island areas AI and can connect the corresponding two island areas AI. In some embodiments, one island area AI can be connected to the corresponding plurality of island areas AI through the plurality of bridging areas AB. In some embodiments, the display device 10 includes a plurality of pixel structures 110 and a plurality of organic insulating structures 120. The plurality of pixel structures 110 are respectively disposed on the plurality of island areas AI, and the plurality of organic insulating structures 120 are respectively disposed on the plurality of bridging areas AB and each extends between two pixel structures 110. In some embodiments, the plurality of island areas AI of the display device 10 are arranged in an array, and the plurality of pixel structures 110 of the display device 10 are respectively disposed on the plurality of island areas AI and are arranged accordingly in an array. For example, the plurality of island areas AI can be arranged edge-to-edge.

[0022] Referring to Figure 1B, each pixel structure 110 can, for example, constitute a pixel or sub-pixel of the display device 10. In some embodiments, the pixel structure 110 includes a light-emitting element (LD). The light-emitting element LD can be, for example, a micro light-emitting diode, an organic light-emitting diode, or other self-emissive element. For example, each pixel structure 110 includes three light-emitting elements LD1, LD2, and LD3, and the three light-emitting elements LD1, LD2, and LD3 can each have a different light color. For example, light-emitting element LD1 can emit red light, light-emitting element LD2 can emit green light, and light-emitting element LD3 can emit blue light, so that each pixel structure 110 can constitute a pixel of the display device 10, thereby achieving a full-color display effect. However, there is no particular limitation on the number or color of the light-emitting elements LD. In some embodiments, each pixel structure 110 may include one, two, four, or more light-emitting elements LD.

[0023] For example, the pixel structure 110 may further include transistors T11, T12, T13, T21, T22, T23, T31, T32, T33, and capacitors C1, C2, C3, respectively, corresponding to the light-emitting elements LD1, LD2, and LD3. The gates of transistors T11, T12, and T13 can be electrically connected to corresponding signal sources via signal lines SL (e.g., acting as scan lines) to receive corresponding gate signals via signal lines SL. The sources of transistors T11, T12, and T13 can be electrically connected to corresponding signal sources via signal lines DL1, DL2, and DL3 (e.g., acting as data lines) to receive corresponding source signals via signal lines DL1, DL2, and DL3, respectively. The drains of transistors T11, T12, and T13 can be electrically connected to the gates of transistors T21, T22, and T23, respectively, to control the on / off state of transistors T21, T22, and T23. The sources of transistors T21, T22, and T23, and the cathodes of light-emitting elements LD1, LD2, and LD3, can be electrically connected to the corresponding signal sources Vdd and Vss, respectively, to receive the corresponding voltage signals. The drains of transistors T21, T22, and T23 can be electrically connected to the sources of transistors T31, T32, and T33, respectively. The gates of transistors T31, T32, and T33 can be electrically connected to the signal source EM. The drains of transistors T31, T32, and T33 can be electrically connected to the anodes of light-emitting elements LD1, LD2, and LD3, respectively. Transistors T31, T32, and T33 can act as switching elements to control the emission time of light-emitting elements LD1, LD2, and LD3, respectively. Furthermore, the terminals of capacitors C1, C2, and C3 can be electrically connected to the drains of transistors T11, T12, and T13, and the sources of transistors T21, T22, and T23, respectively. Transistors T11, T12, and T13 can control the charging time of capacitors C1, C2, and C3, respectively. Transistors T11, T12, and T13, and T21, T22, and T23 can provide stable current to light-emitting elements LD1, LD2, and LD3 within one frame time. In addition, capacitors C1, C2, and C3 can maintain the gate voltage of transistors T21, T22, and T23 after the scanning pulse signal of transistors T11, T12, and T13 ends, thereby providing a continuous driving current to light-emitting elements LD1, LD2, and LD3 until the end of one frame time.

[0024] Referring to FIG1C, in some embodiments, the display device 10 may include a substrate 102; however, in other embodiments, the display device 10 may not include a substrate 102. The substrate 102 may be used to support the pixel structure 110 and the organic insulating structure 120. The substrate 102 may be a flexible substrate. The material of the substrate 102 may be, for example, polyimide (PI), polycarbonate (PC), polyester (PET), cyclic olefin copolymer (COC), metallocene-based cyclic olefin copolymer (mCOC), or other suitable materials, but is not limited thereto. In some embodiments, the width W of the substrate 102 is 25 μm to 40 μm, but is not limited thereto.

[0025] Referring to Figures 1A and 1C, the organic insulating structure 120 may be disposed above the substrate 102 within the bridging region AB. In some embodiments, the display device 10 may further include an insulating layer 104, which may be located between the organic insulating structure 120 and the substrate 102. In some embodiments, the material of the insulating layer 104 is the same as that of the organic insulating structure 120, but this is not a limitation. The organic insulating structure 120 and the insulating layer 104 may have a single-layer structure or a multi-layer structure. When the organic insulating structure 120 or the insulating layer 104 has a multi-layer structure, the layers in the multi-layer structure may include the same material or different materials. For example, the material of the organic insulating structure 120 or the insulating layer 104 may include any or a combination of acrylic, siloxane, polyimide, and epoxy resin, but this is not a limitation. In some embodiments, the organic insulating structure 120 and / or the insulating layer 104 may include an organic photoresist material.

[0026] The display device 10 also includes signal lines 131 and 132 located in the bridging area AB, and signal lines 131 and 132 are electrically independent. In other words, signal lines 131 and 132 can be physically separated from each other, and signal lines 131 and 132 can each transmit different signals.

[0027] Viewed in cross-section as shown in FIG1C, signal lines 131 and 132 extend from the top surface of the organic insulating structure 120 to two opposite side surfaces, respectively. For example, signal line 131 extends from the top surface 120T to the side surface 120S1 of the organic insulating structure 120, and signal line 132 extends from the top surface 120T to the side surface 120S2 of the organic insulating structure 120. By extending signal lines 131 and 132 to the opposite side surfaces of the organic insulating structure 120, the distribution area of ​​signal lines 131 and 132 can be increased, thereby reducing the impedance of signal lines 131 and 132. Furthermore, since signal lines 131 and 132 do not overlap, signal level problems can be avoided. In some embodiments, the impedance of signal lines 131 and 132 can be reduced by up to 0.5 times. In detail, compared to a design where signal lines 131 and 132 do not extend to the two opposite surfaces of the organic insulation structure 120, extending signal lines 131 and 132 to the two opposite surfaces of the organic insulation structure 120 can reduce the impedance of signal lines 131 and 132 by up to 50%. Furthermore, covering the side surfaces of the organic insulation structure 120 with signal lines 131 and 132 can also improve the strain resistance of the organic insulation structure 120. In some embodiments, the organic insulation structure 120 can withstand at least 20% strain.

[0028] Side surface 120S1 may be opposite to side surface 120S2. For example, referring to Figures 1A and 1C simultaneously, at any point in the bridging region AB, side surface 120S1 and side surface 120S2 are located on opposite sides of the bridging region AB in a direction D2 that is substantially perpendicular to the extension direction D1 of the bridging region AB. In some embodiments, the extension direction D1 of the bridging region AB may point to different directions as the specified point changes, and direction D2 may remain substantially perpendicular to the extension direction D1 as the specified point changes.

[0029] In some embodiments, the display device 10 may further include a buffer layer 106; however, in some embodiments, the display device 10 may not include a buffer layer 106. The buffer layer 106 may be located between the signal lines 131, 132 and the substrate 102 to improve the adhesion of the signal lines 131, 132. In some embodiments, the buffer layer 106 is located on opposite sides of the insulating layer 104 in a direction D2 that is substantially perpendicular to the extension direction D1 of the bridging region AB, which may help improve the adhesion between the insulating layer 104 and the substrate 102. In some embodiments, the signal lines 131 and the buffer layer 106, and the signal lines 132 and the buffer layer 106 respectively cover the two opposite sidewalls of the insulating layer 104 in direction D2. The material of the buffer layer 106 may include, for example, inorganic insulating materials such as silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiNxOy), and titanium oxide (TiO), but is not limited thereto.

[0030] In some embodiments, the display device 10 further includes a cover layer 140, which may cover the organic insulating structure 120, signal lines 131, 132, and buffer layer 106 on the substrate 102. For example, the cover layer 140 covers the portion of the top surface 120T of the organic insulating structure 120 that is not covered by the signal lines 131, 132, the top and side surfaces of the signal lines 131, 132, and the outer surface of the buffer layer 106, and the cover layer 140 physically contacts the top surface of the substrate 102. The material of the cover layer 140 is, for example, an organic photoresist material, but is not limited thereto.

[0031] In some embodiments, the display device 10 further includes a protective film 150, which may be an ultra-thin stretchable film. The protective film 150 may cover the top and side surfaces of the cover layer 140. In some embodiments, the protective film 150 also covers the side surfaces of the substrate 102. The material of the protective film 150 may be, for example, a transparent optical adhesive or a transparent encapsulating adhesive, but is not limited thereto.

[0032] The display device 10 may further include signal lines 133-139 located in the organic insulating structure 120. In some embodiments, signal lines 131-139 extend from the bridging region AB to the island region AI and are electrically connected to a plurality of components of the pixel structure 110, respectively. For example, any one of the signal lines 131-139 may be electrically connected to any one of the signal lines SL, DL1, DL2, DL3 and signal sources Vdd, Vss, EM in the pixel structure 110 as shown in FIG. 1B.

[0033] Signal lines 131-139 may have a long, narrow shape and may extend along the extension direction D1 of the bridging region AB. Signal lines 131-139 may possess good conductivity and stretchability. Specifically, the material of signal lines 131-139 may have relatively low resistivity; for example, the resistivity of signal lines 131-139 may be between 1.5 x 10⁻⁵ and 5 x 10⁻⁴ Ω*mm. For example, signal lines 131-139 may include metallic materials such as titanium, aluminum, copper, and silver, or their alloys, but are not limited to these. In some embodiments, signal lines 131-139 further include conductive oxides (e.g., indium tin oxide, zinc aluminum oxide, zinc gallium oxide, zinc indium oxide, etc.), conductive polymers (e.g., poly(3,4-vinyl dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)), metallic nanowires (e.g., silver nanowires), or combinations thereof. In some embodiments, signal lines 131-139 may each have a single-layer structure or a multi-layer structure. When signal lines 131-139 have a multi-layer structure, the individual layers in the multi-layer structure may comprise the same material or different materials.

[0034] In some embodiments, the organic insulating structure 120 includes multiple stacked organic insulating layers, with the width of each layer decreasing from the bottom to the top to ensure smooth coverage by the upper organic insulating layer, thereby improving the coating yield of the organic insulating layer. The height H of the organic insulating structure 120 can be approximately 7.5 μm to 18 μm to ensure that the organic insulating structure 120 can be well formed and that sufficient signal lines can be provided within the organic insulating structure 120.

[0035] The organic insulating structure 120 may include three, four, or an appropriate number of organic insulating layers. For example, the organic insulating structure 120 includes organic insulating layers 121, 122, and 123, wherein organic insulating layer 121 may be the lowest layer closest to substrate 102, organic insulating layer 123 may be the highest layer furthest away from substrate 102, and organic insulating layer 122 may be located between organic insulating layers 121 and 123. In some embodiments, organic insulating layer 121 has a width W1, organic insulating layer 122 has a width W2, and organic insulating layer 123 has a width W3, and W3... <W2<W1。

[0036] In some embodiments, the organic insulating layer 122 covers only the top surface 121T of the organic insulating layer 121 and does not cover the side surface 121S of the organic insulating layer 121. In some embodiments, the organic insulating layer 123 covers only the top surface 122T of the organic insulating layer 122 and does not cover the side surface 122S of the organic insulating layer 122.

[0037] The cross-section of the organic insulating structure 120 can be generally trapezoidal to help improve the coating yield of the organic insulating layers (e.g., organic insulating layers 122, 123) of the organic insulating structure 120. In some embodiments, the side surfaces 120S1, 120S2 of the organic insulating structure 120 can be generally straight. In some embodiments, the width W8 of the top surface 120T of the organic insulating structure 120 is about 13 μm to 21 μm, for example 18 μm, but not limited thereto. In some embodiments, there is a distance a between the orthographic projection of the top surface 120T of the organic insulating structure 120 onto the bottom surface 120B of the organic insulating structure 120 and one end of the bottom surface 120B, and the height H of the organic insulating structure 120 can be about 3 times the distance a. In other words, the distance a can be about (1 / 3)H. In some embodiments, the width W1 of the bottom surface 120B of the organic insulating structure 120 is the sum of the width W8 of the top surface 120T and two spacings a (i.e., (2 / 3)H), i.e., W1 = W8 + (2 / 3)H. In some embodiments, H = 3a ± 1.5 μm, but is not limited thereto.

[0038] Signal lines 133, 134, and 135 may be located in organic insulating layer 121, signal lines 136 and 137 may be located in organic insulating layer 122, and signal lines 138 and 139 may be located in organic insulating layer 123. In some embodiments, the minimum linewidth W4 of signal lines 133-139 is approximately 2.5 μm to avoid excessive resistance in signal lines 133-139. In some embodiments, the thickness H1 of signal lines 133-139 is approximately 5,000 angstroms (Å) to 10,000 Å to ensure that the resistance of signal lines 133-139 is not excessive, while signal lines 133-139 can be well encapsulated in organic insulating structure 120.

[0039] The spacing between signal lines located within the same organic insulating layer can be approximately 2.8 μm to 4 μm. For example, the spacing W5 between signal lines 133, 134, and 135 located within the same organic insulating layer 121 is approximately 2.8 μm to 4 μm. When the spacing W5 is less than 2.8 μm, it may not be possible to ensure that the etching process used to pattern the signal lines 133, 134, and 135 can form signal lines 133, 134, and 135 that are physically separated from each other. When the spacing W5 is greater than 4 μm, it may not be possible to form a sufficient number of signal lines within the finite-width organic insulating structure 120, or it may cause the signal lines to be exposed from the side surface of the organic insulating structure 120.

[0040] In some embodiments, the minimum distance W6 between the signal lines 133, 134, 135 and the side surfaces 120S1, 120S2 of the organic insulating structure 120 is about 1.5 μm, so as to avoid the organic insulating structure 120 failing to properly cover the signal lines 133, 135, or to prevent the signal lines 133 or 135 from being exposed from the side surfaces 120S1 or 120S2 of the organic insulating structure 120.

[0041] In some embodiments, the minimum spacing between signal lines located in different organic insulating layers is approximately 2 μm to 4.5 μm. For example, signal line 136 located in organic insulating layer 122 and signal line 138 located in organic insulating layer 123 have a minimum spacing H2, which is between approximately 2 μm and 4.5 μm. When the minimum spacing H2 is less than 2 μm, the signal transmitted by signal line 136 may interfere with the signal transmitted by signal line 138, for example, coupling may occur, leading to signal level problems. When the minimum spacing H2 is greater than 4.5 μm, organic insulating layer 122 may be too thick to be properly patterned.

[0042] In some embodiments, the spacing W7 between signal lines 131 and 132 is approximately 4 μm to 12 μm. Since signal lines 131 and 132 may transmit signals with large currents, designing the spacing W7 between signal lines 131 and 132 to be larger than the spacing W5 between signal lines located in the same organic insulating layers 121, 122, or 123 can prevent deviations in the signal level transmitted by signal lines 131 and 132, thereby improving the signal transmission efficiency of signal lines 131 and 132.

[0043] Referring to Figure 1D, in some embodiments, the pixel structure 110 may also include a buffer layer 106, organic insulating layers 121-123, and a capping layer 140. The transistor T of the pixel structure 110 may be disposed between the buffer layer 106 and the organic insulating layer 121, and the light-emitting element LD of the pixel structure 110 may be disposed between the organic insulating layers 122 and 123. The transistor T may include a gate G, a source S, a drain D, a channel C, and a gate insulating layer GI located between the gate G and the channel C.

[0044] In some embodiments, signal lines 131, 132, 138, and 139 may individually extend to the pixel structure 110 of the island AI, and in the island AI, signal lines 131 and 132 may be electrically connected to signal lines 138 and 139 respectively through vias V1 and V2 passing through the organic insulating layer 123.

[0045] Referring to Figures 1B and 1D, signal lines 131 and 138 can be electrically connected to the signal source Vdd, transmitting a high-voltage signal to capacitors C1-C3 and transistors T21-T23 in the pixel structure 110. Additionally, signal lines 132 and 139 can be electrically connected to the signal source Vss, transmitting a voltage signal to electrode E1 of the light-emitting element LD. In some embodiments, the signal source Vdd and signal source Vss have different voltages, but this is not a limitation. In some embodiments, the drain D of transistor T (e.g., corresponding to transistors T31, T32, or T33 in Figure 1B) can be electrically connected to electrode E2 of the light-emitting element LD.

[0046] Referring to Figures 1B and 1C, in some embodiments, signal lines 133-135 can be electrically connected to signal lines DL1, DL2, and DL3, respectively. In some embodiments, one of signal lines 136-137 can be electrically connected to signal line SL. Referring to Figures 1B to 1D, in some embodiments, the other of signal lines 136-137 can be electrically connected to signal source EM and transmit the signal to the gate G of transistor T.

[0047] Figure 2 is a partial cross-sectional schematic diagram of the bridging area AB of a display device 20 according to an embodiment of the present invention. In Figure 2, the display device 20 can be regarded as another embodiment of the display device 10 of Figures 1A to 1D, and the display device 20 may have all the components of the display device 10. This embodiment uses the same or similar component reference numerals and related content as the embodiments of Figures 1A to 1D.

[0048] Compared to the display device 10 shown in Figure 1C, the main difference of the display device 20 shown in Figure 2 is that the vias V1 and V2 in the organic insulating layer 123 of the display device 20 can be located in the bridging region AB, rather than in the island region AI. That is, signal line 131 can be electrically connected to signal line 138 through the via V1 located in the bridging region AB, and signal line 132 can be electrically connected to signal line 139 through the via V2 located in the bridging region AB.

[0049] In some embodiments, one of vias V1 and V2 is located in the bridging region AB, while the other of vias V1 and V2 is located in the island region AI. For example, via V1 is located in the bridging region AB, while via V2 is located in the island region AI. Alternatively, via V1 may be located in the island region AI, while via V2 may be located in the bridging region AB.

[0050] Figure 3A is a partial cross-sectional schematic diagram of the bridging area AB of the display device 30 according to an embodiment of the present invention. Figure 3B is a partial cross-sectional schematic diagram of the island area AI of the display device 30 according to an embodiment of the present invention. In Figures 3A and 3B, the display device 30 can be regarded as another embodiment of the display device 10 of Figures 1A to 1D, and the display device 30 may have all the components of the display device 10. This embodiment uses the same or similar component reference numerals and related content as the embodiments of Figures 1A to 1D.

[0051] Compared to the display device 10 shown in Figures 1A to 1D, the display device 30 shown in Figures 3A to 3B differs primarily in that the organic insulating structure 120 of the display device 30 may include four organic insulating layers. For example, the organic insulating structure 120 includes organic insulating layers 121, 122, 123, and 124, wherein organic insulating layer 121 may be the lowest layer closest to the substrate 102, organic insulating layer 124 may be the highest layer furthest from the substrate 102, organic insulating layer 122 may be located between organic insulating layers 121 and 124, and organic insulating layer 123 may be located between organic insulating layers 122 and 124. In some embodiments, the width of organic insulating layers 121-124 decreases from the lowest layer to the highest layer.

[0052] In addition, signal line 138 can be located independently in organic insulating layer 123, and signal line 139 can be located independently in organic insulating layer 124. In this way, signal lines 138 and 139 can have a wider width, thereby further reducing the impedance of signal lines 138 and 139.

[0053] In some embodiments, in the island area AI, signal line 131 can be electrically connected to signal line 138 through a via V1 passing through organic insulating layers 123 and 124, and signal line 132 can be electrically connected to signal line 139 through a via V2 passing through organic insulating layer 124.

[0054] Figure 4 is a partial cross-sectional schematic diagram of the bridging area AB of a display device 40 according to an embodiment of the present invention. In Figure 4, the display device 40 can be regarded as another embodiment of the display device 30 of Figures 3A to 3B, and the display device 40 may have all the components of the display device 30. This embodiment uses the same or similar component reference numerals and related content as the embodiments of Figures 3A to 3B.

[0055] Compared to the display device 30 shown in Figure 3A, the main difference of the display device 40 shown in Figure 4 is that the vias V1 and V2 in the organic insulating layers 123 and 124 of the display device 40 can be located in the bridging region AB, instead of the island region AI. That is, signal line 131 can be electrically connected to signal line 138 through the via V1 located in the bridging region AB and passing through the organic insulating layers 123 and 124, while signal line 132 can be electrically connected to signal line 139 through the via V2 located in the bridging region AB and passing through the organic insulating layer 124.

[0056] Figure 5 is a partial cross-sectional schematic diagram of the bridging area AB of a display device 50 according to an embodiment of the present invention. In Figure 5, the display device 50 can be regarded as another embodiment of the display device 30 of Figures 3A to 3B, and the display device 50 may have all the components of the display device 30. This embodiment uses the same or similar component reference numerals and related content as the embodiments of Figures 3A to 3B.

[0057] Compared to the display device 30 shown in Figure 3A, the main difference of the display device 50 shown in Figure 5 is that the side surfaces 120S1 and 120S2 of the organic insulating structure 120 of the display device 50 can have an arc-shaped contour. This increases the width of the organic insulating layers 121-124 of the organic insulating structure 120, allowing for a larger process margin in the fabrication process used to form the signal lines 131-139.

[0058] Figure 6 is a partial cross-sectional schematic diagram of the bridging area AB of a display device 60 according to an embodiment of the present invention. In Figure 6, the display device 60 can be regarded as another embodiment of the display device 30 of Figures 3A to 3B, and the display device 60 may have all the components of the display device 30. This embodiment uses the same or similar component reference numerals and related content as the embodiments of Figures 3A to 3B.

[0059] Compared to the display device 30 shown in Figure 3A, the main difference between the display device 60 shown in Figure 6 and the display device 30 is that the organic insulating layers 121 and 122 of the organic insulating structure 120 of the display device 60 have rectangular outlines, while the organic insulating layers 123 and 124 have trapezoidal outlines. This reduces the difficulty of covering the organic insulating layers 121-124 and further increases their width, allowing for greater process margin in the fabrication process used to form the signal lines 131-139.

[0060] Figure 7 is a partial cross-sectional schematic diagram of the bridging area AB of a display device 70 according to an embodiment of the present invention. In Figure 7, the display device 70 can be regarded as another embodiment of the display device 30 of Figures 3A to 3B, and the display device 70 may have all the components of the display device 30. This embodiment uses the same or similar component reference numerals and related content as the embodiments of Figures 3A to 3B.

[0061] Compared to the display device 30 shown in FIG. 3A, the main difference of the display device 70 shown in FIG. 7 is that the side surfaces 120S1 and 120S2 of the organic insulating structure 120 of the display device 70 can have a stepped profile. In other words, the width of the top surface 121T of the organic insulating layer 121 of the organic insulating structure 120 can be greater than the width of the bottom surface 122B of the organic insulating layer 122; the width of the top surface 122T of the organic insulating layer 122 can be greater than the width of the bottom surface 123B of the organic insulating layer 123; and the width of the top surface 123T of the organic insulating layer 123 can be greater than the width of the bottom surface 124B of the organic insulating layer 124. In this way, the coating yield of the organic insulating layers 122-124 can be improved, and it helps to achieve the predetermined thickness of the signal lines 131 and 132 on the side surfaces 120S1 and 120S2 of the organic insulating structure 120. In some embodiments, portions of signal lines 131 and 132 on side surfaces 120S1 and 120S2 of the organic insulating structure 120 may conform to side surfaces 120S1 and 120S of the organic insulating structure 120 and have a stepped profile.

[0062] Figure 8 is a partial cross-sectional schematic diagram of the bridging area AB of a display device 80 according to an embodiment of the present invention. In Figure 8, the display device 80 can be regarded as another embodiment of the display device 20 of Figure 2, and the display device 80 may have all the components of the display device 20. This embodiment uses the same or similar component reference numerals and related content as the embodiment of Figure 2.

[0063] Compared with the display device 20 shown in FIG. 2, the main difference of the display device 80 shown in FIG. 8 is that the signal line 138 of the display device 80 can extend from the top surface 122T of the organic insulating layer 122 to the side surface 122S1 of the organic insulating layer 122, and the signal line 139 can extend from the top surface 122T of the organic insulating layer 122 to the side surface 122S2 of the organic insulating layer 122, wherein the side surface 122S1 and the side surface 122S2 of the organic insulating layer 122 are opposite to each other. Signal line 131 can physically contact the side surface 138S of signal line 138 to be electrically connected to signal line 138, and signal line 132 can physically contact the side surface 139S of signal line 139 to be electrically connected to signal line 139. In this way, signal lines 131 and 132 can be stacked on top of signal lines 138 and 139 respectively to increase the thickness, thereby improving the signal quality, and it is not necessary to provide the through holes V1 and V2 as described above.

[0064] In some embodiments, signal line 138 is located between the side surface 122S1 of organic insulating layer 122 and signal line 131. In some embodiments, signal line 139 is located between the side surface 122S2 of organic insulating layer 122 and signal line 132. In some embodiments, signal line 138 extends from the top surface 122T of organic insulating layer 122 to the side surface 122S1 of organic insulating layer 122 and the side surface 121S1 of organic insulating layer 121. In some embodiments, signal line 139 extends from the top surface 122T of organic insulating layer 122 to the side surface 122S2 of organic insulating layer 122 and the side surface 121S2 of organic insulating layer 121, wherein the side surface 121S2 of organic insulating layer 121 is opposite to the side surface 121S1.

[0065] Figures 9A to 9E are partial cross-sectional schematic diagrams illustrating the steps of a manufacturing method for a display device 90 according to an embodiment of the present invention. The following description, in conjunction with Figures 9A to 9E, continues to illustrate embodiments of the manufacturing method for the display device 90, but is not intended to limit the scope of the description.

[0066] Referring to Figure 9A, an insulating layer 104 is formed within a predetermined bridging region AB on the substrate 102. The insulating layer 104 can be formed using processes such as spin coating, lithography, and ashing, but is not limited thereto. In some embodiments, the material used to form the insulating layer 104 includes an organic photoresist material, but is not limited thereto.

[0067] Next, signal lines 133, 134, and 135 are formed on the insulating layer 104 using processes such as thin-film deposition, lithography, and etching. In some embodiments, signal lines 133, 134, and 135 are physically separated from each other. In some embodiments, signal lines 133, 134, and 135 extend substantially equidistantly from each other within the bridging region AB. The materials used to form signal lines 133, 134, and 135 may include metallic materials such as titanium, aluminum, copper, and silver, or combinations thereof, or other suitable conductive materials or combinations thereof, or combinations of the aforementioned metallic materials with other suitable conductive materials. For example, signal lines 133, 134, and 135 may each comprise a titanium / aluminum / titanium stack.

[0068] Next, referring to FIG9B, an organic insulating layer 121 is formed on the substrate 102, and the organic insulating layer 121 may cover signal lines 133, 134, 135, insulating layer 104, and substrate 102. The organic insulating layer 121 may be formed using processes such as spin coating, lithography, and ashing, but is not limited thereto. In some embodiments, the material used to form the organic insulating layer 121 includes organic photoresist materials, but is not limited thereto. In some embodiments, the organic insulating layer 121 is located in predetermined bridging areas AB and island areas AI on the substrate 102 (for example, referring to FIG3B).

[0069] Next, a buffer layer 106 is formed on the substrate 102, and the buffer layer 106 may be located on two opposite sides of the organic insulating layer 121 in the direction from signal line 133 to signal line 135. The buffer layer 106 may be formed using, for example, thin film deposition, lithography, and etching processes, but is not limited thereto. In some embodiments, the material used to form the buffer layer 106 includes inorganic insulating materials, such as SiNx, SiOx, SiNxOy, TiO, etc.

[0070] Next, signal lines 136 and 137 are formed on the organic insulating layer 121 using processes such as thin film deposition, lithography, and etching. Signal lines 136 and 137 can be physically separated from each other. In some embodiments, conductive layers 136' and 137' are also formed during the formation of signal lines 136 and 137, wherein conductive layer 136' can be located on the side surface 121S1 of the organic insulating layer 121, and conductive layer 137' can be located on the side surface 121S2 of the organic insulating layer 121. In some embodiments, conductive layers 136' and 137' extend along the side surfaces 121S1 and 121S2 of the organic insulating layer 121 to the top surface of the buffer layer 106, respectively.

[0071] Next, referring to FIG9C, an organic insulating layer 122 is formed on the organic insulating layer 121 and signal lines 136 and 137 using processes such as spin coating, lithography, and ashing, such that the organic insulating layer 122 surrounds the signal lines 136 and 137. In some embodiments, the material used to form the organic insulating layer 122 includes organic photoresist materials, but is not limited thereto. In some embodiments, the organic insulating layer 122 is located on a predetermined bridging region AB and an island region AI on the substrate 102 (for example, please refer to FIG3B).

[0072] Next, signal lines 138 are formed on the organic insulating layer 122 using processes such as thin film deposition, lithography, and etching. In some embodiments, conductive layers 138' and 138" are also formed during the formation of signal lines 138. Conductive layer 138' may be located on the side surface 122S1 of the organic insulating layer 122 and the conductive layer 136', and conductive layer 138" may be located on the side surface 122S2 of the organic insulating layer 122 and the conductive layer 137'. In some embodiments, conductive layers 138' and 138" extend along conductive layers 136' and 137' to the top surface of the buffer layer 106, respectively.

[0073] Next, referring to FIG9D, an organic insulating layer 123 is formed on the organic insulating layer 122 and the signal line 138 using processes such as spin coating, lithography, and ashing, such that the organic insulating layer 123 surrounds the signal line 138. In some embodiments, the material used to form the organic insulating layer 123 includes organic photoresist materials, but is not limited thereto. In some embodiments, the organic insulating layer 123 is located in a predetermined bridging region AB and an island region AI on the substrate 102 (for example, please refer to FIG3B).

[0074] Next, signal lines 139 are formed on the organic insulating layer 123 using processes such as thin film deposition, lithography, and etching. In some embodiments, conductive layers 139' and 139" are also formed during the formation of signal lines 139. The conductive layer 139' may be located on the side surface 123S1 of the organic insulating layer 123 and the conductive layer 138', and the conductive layer 139" may be located on the side surface 123S2 of the organic insulating layer 123 and the conductive layer 138" respectively. In some embodiments, the conductive layers 139' and 139" extend along the conductive layers 138' and 138" to the top surface of the buffer layer 106, respectively.

[0075] Next, referring to FIG9E, an organic insulating layer 124 is formed on the organic insulating layer 123 and the signal line 139 using processes such as spin coating, lithography, and ashing, such that the organic insulating layer 124 surrounds the signal line 139. In some embodiments, the material used to form the organic insulating layer 124 includes organic photoresist materials, but is not limited thereto. In some embodiments, the organic insulating layer 124 is located on a predetermined bridging region AB and an island region AI on the substrate 102 (for example, please refer to FIG3B).

[0076] Next, signal lines 131 and 132 are formed on the organic insulating layer 124 using processes such as thin film deposition, lithography, and etching. Signal line 131 extends from the top surface 124T of the organic insulating layer 124 to the side surface 124S1 of the organic insulating layer 124, and signal line 132 extends from the top surface 124T of the organic insulating layer 124 to the side surface 124S2 of the organic insulating layer 124. In some embodiments, signal line 131 also extends along the conductive layer 139' to the top surface of the buffer layer 106. In some embodiments, signal line 132 also extends along the conductive layer 139" to the top surface of the buffer layer 106.

[0077] In some embodiments, conductive layers 136', 138', and 139' are sequentially stacked on the side surface 120S1 of the organic insulating structure 120 and are in solid contact with each other to form a conductive stack CS1 that is in solid contact with the signal line 131. This ensures that the conductive stack CS1 with sufficient thickness and electrical connection to the signal line 131 is formed on the side surface 120S1 of the organic insulating structure 120, resulting in reduced impedance for the signal line 131 in conjunction with the conductive stack CS1. Similarly, conductive layers 137', 138', and 139' can be sequentially stacked on the side surface 120S2 of the organic insulating structure 120 and are in solid contact with each other to form a conductive stack CS2 that is in solid contact with the signal line 132, thereby ensuring that the conductive stack CS2 with sufficient thickness and electrical connection to the signal line 132 is formed on the side surface 120S2 of the organic insulating structure 120, resulting in reduced impedance for the signal line 132 in conjunction with the conductive stack CS2.

[0078] Next, processes such as spin coating, lithography, and ashing can be used to form a capping layer 140 on the organic insulating layer 124, signal lines 131, 132, and substrate 102, and the capping layer 140 can completely cover the organic insulating layer 124, signal lines 131, 132, and substrate 102. In some embodiments, the capping layer 140 is located in a predetermined bridging area AB and an island area AI on the substrate 102 (for example, please refer to FIG. 3B).

[0079] Next, a transparent optical adhesive or a transparent encapsulating adhesive can be applied to the top and side surfaces of the cover layer 140 using, for example, a spraying process, to form a protective film 150. In some embodiments, the protective film 150 further covers the side surfaces of the substrate 102.

[0080] In summary, the display device of the present invention, by extending the signal lines to the side surface of the organic insulating structure, can increase the distribution area of ​​the signal lines, thereby reducing the impedance of the signal lines. Furthermore, since the signal lines do not overlap, signal level problems can be avoided. Additionally, covering the side surface of the organic insulating structure with the signal lines can improve the strain resistance of the organic insulating structure. Moreover, by making the width of the multilayer organic insulating layers of the organic insulating structure decrease from the bottom layer to the top layer, or by giving the side surface of the organic insulating structure a stepped contour, the coating yield of the organic insulating layers of the organic insulating structure can be further improved.

[0081] Although the present invention has been disclosed above by way of embodiments, it is not intended to limit the present invention. Anyone skilled in the art can make some modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the appended claims.

[0082] 10~90: Display device 102:Substrate 104: Insulation layer 106: Buffer layer 110: Pixel Structure 120: Organic insulating structure 120B, 122B, 123B, 124B: Bottom surface 120S1, 120S2, 121S, 121S1, 121S2, 122S, 122S1, 122S2, 123S1, 123S2, 124S1, 124S2, 138S, 139S: Side surfaces 120T, 121T, 122T, 123T, 124T: Top surface 121~124: Organic insulating layer 131~139, SL, DL1, DL2, DL3: Signal lines 136', 137', 138', 138”, 139', 139”: Conductive layer 140: Overlay 150: Protective film A-A', B-B': Section lines AB: Bridging area AI: Island Area a: Spacing C: Channel C1, C2, C3: Storage capacitors CS1, CS2: Conductive stack D: Jiji D1, D2: Direction E1, E2: Electrodes G: Gate GI: Gate Insulation Layer H: Height H1: Thickness H2: Minimum Spacing LD, LD1, LD2, LD3: Light-emitting elements S: Source T, T11, T12, T13, T21, T22, T23, T31, T32, T33: Transistors V1, V2: Through holes Vdd, Vss, EM: signal source W, W1~W3, W8: Width W4: Minimum line width W5, W7: Spacing W6: Minimum Distance

Claims

1. A display device having adjacent island areas and bridging areas, and comprising: A pixel structure is set in the island area; An organic insulating structure is located in the bridging region, wherein the organic insulating structure extends between two adjacent pixel structures, the organic insulating structure having a top surface and two opposite sides located on the top surface and connected to the two opposite side surfaces of the top surface; a first signal line is located in the bridging region and is electrically connected to a first signal source; And a second signal line, located in the bridging region and electrically connected to a second signal source, wherein the first signal line and the second signal line extend from the top surface of the organic insulating structure to the two opposite side surfaces of the organic insulating structure, respectively.

2. The display device as claimed in claim 1, wherein the first signal source and the second signal source have different voltages.

3. The display device as claimed in claim 1, wherein the first signal line does not overlap the second signal line in the direction from the top surface of the organic insulating structure to the bottom surface of the organic insulating structure.

4. The display device as claimed in claim 1, wherein the organic insulating structure comprises multiple stacked organic insulating layers, and the individual widths of the multiple organic insulating layers decrease from the bottommost layer to the topmost layer of the multiple organic insulating layers.

5. The display device as claimed in claim 1, wherein the two opposite surfaces of the organic insulating structure are linear, arc-shaped, or stepped.

6. The display device of claim 1, wherein the first signal line and the second signal line are respectively electrically connected to conductive stacks stacked along the two opposite surfaces of the organic insulating structure.

7. The display device as claimed in claim 1 further includes a plurality of third signal lines, wherein the plurality of third signal lines are located in the organic insulating structure and are electrically connected to a plurality of signal sources respectively.

8. The display device as claimed in claim 7, wherein one of the plurality of third signal lines is electrically connected to the first signal line, and another of the plurality of third signal lines is electrically connected to the second signal line.

9. The display device of claim 8, wherein one of the plurality of third signal lines is electrically connected to the first signal line via a first via, and the other of the plurality of third signal lines is electrically connected to the second signal line via a second via, wherein the first via and the second via are each independently located in the bridging region or the island region.

10. The display device of claim 8, wherein one and the other of the plurality of third signal lines further extend along the two opposite surfaces of the organic insulating structure, and one of the plurality of third signal lines is sandwiched between the first signal line and one of the two opposite surfaces of the organic insulating structure, and the other of the plurality of third signal lines is sandwiched between the second signal line and the other of the two opposite surfaces of the organic insulating structure.

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