Method for forming carbon containing film

Abstract

A method for forming a carbon containing film according to an embodiment of the present disclosure may include injecting a carbon containing gas into a chamber accommodating a substrate to form an amorphous film on the substrate, and forming a plasma while injecting a nitrogen containing gas into the chamber to crystallize the amorphous film while doping the amorphous film with nitrogen. Therefore, according to embodiments of the present disclosure, a crystalline carbon containing film may be easily formed at low temperatures. Accordingly, when forming the crystalline carbon containing film, damage to at least one of the substrate and a lower film due to high temperature heat may be inhibited or prevented. In addition, defects formed in the crystalline carbon containing film may be filled. Therefore, an effect of improving the characteristics of the carbon containing film is provided. In addition, in crystallizing the carbon containing film, nucleation may be facilitated and growth rates may be increased.

Images