Semiconductor device manufacturing method and plasma processing method

Abstract

A technique (method for manufacturing a semiconductor device and plasma processing method) is provided, which can selectively form a protective film on the top of a mask and the area around the corners of the top of the mask formed on an etched film having a hard mask pattern. The provided technique includes: a first step of forming a protective film on a hard mask formed on an etched film; a second step of selectively removing a carbon-containing protective film formed on the etched film from the protective film on the upper part of the hard mask and the protective film on the sidewalls of the hard mask after the first step; a third step of forming a SiN film on the protective film after the second step; a fourth step of selectively removing the SiN film formed on the protective film on the sidewalls of the hard mask and the SiN film on the etched film after the third step; and a fifth step of performing plasma etching on the etched film after the fourth step.

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