Substrate processing method and substrate processing apparatus

TW202635065APending Publication Date: 2026-08-16TOKYO ELECTRON LTD
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Patent Information

Application Number
TW114140806
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-11-05
Filing Date
2025-10-22
Publication Date
2026-08-16

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Abstract

[Problem] To improve the uniformity of etching a polycrystalline silicon film formed on a substrate. [Solution] A substrate processing method disclosed herein includes: a process of adding a silica compound to an alkaline processing solution to generate an etching solution, and a process of using the etching solution to etch a polycrystalline silicon film formed on a substrate.
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