Polishing system, polishing method and method for chemical mechanical polishing

Abstract

The present disclosure describes a system and a method for a chemical mechanical polishing (CMP) process on a substrate. The CMP process planarizes a portion of a material layer on the substrate and selectively polishes another portion of the material layer within a predetermined distance from a stop layer. The system includes a polishing pad on a rotating platen and a dispenser configured to dispense an abrasive solution and an additive solution onto the polishing pad. The abrasive solution and the additive solution blend on the polishing pad to form a slurry, which is used to perform the CMP process on the substrate.

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