Semiconductor structure with reduced nanosheets and method of forming the same
TW202635069APending Publication Date: 2026-08-16TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
View PDF 0 Cites 0 Cited by
Patent Information
- Application Number
- TW114127399
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-05-23
- Filing Date
- 2025-07-18
- Publication Date
- 2026-08-16
Smart Images
Figure TWG2TA001072524_001 
Figure TWG2TA001072524_002 
Figure TWG2TA001072524_003
Abstract
The present disclosure provides a semiconductor structure including a first stack structure and a second stack structure. The first stack structure includes first metal gate structures and first channel layers alternatingly arranged with the first metal gate structures. The second stack structure is separated from the first stack structure and includes second metal gate structures and second channel layers alternatingly arranged with the second metal gates. The first stack structure has a first number of the first channel layers. The second stack structure has a second number of the second channel layers. The first number is different from the second number.
Need to check novelty before this filing date? Find Prior Art