Semiconductor device

Abstract

A semiconductor device includes a substrate including a chip region and a scribe lane region including a chip adjacent region, a chip adjacent crossing region, and a peripheral crossing region; a passivation layer; row trenches disposed between the boundary between the chip adjacent crossing region and a first boundary of the peripheral crossing region and the boundary between the chip adjacent crossing region and the chip adjacent region, in a direction crossing the first boundary, and disposed in the passivation layer; and column trenches disposed between the boundary between the chip adjacent crossing region and a second boundary of the peripheral crossing region and the boundary between the chip adjacent crossing region and the chip adjacent region, in a direction crossing the second boundary, and disposed in the passivation layer.

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