In situ cleaning of deposition chamber with microwave plasma

Abstract

Methods of cleaning a vapor deposition substrate processing chamber comprise injecting through a first gas injector having a front face and gas openings of the vapor deposition processing chamber a first cleaning gas mixture comprising first a fluorine-containing gas and a first inert gas at a first temperature and generating a first microwave plasma from the first cleaning gas mixture. The method includes exposing a pedestal including a substrate support surface of the vapor deposition chamber to a second cleaning gas mixture comprising a second fluorine-containing gas and a second inert gas and generating a second microwave plasma from the second cleaning gas mixture at a second temperature. The method includes heating the pedestal and the substrate support surface to a third temperature that is greater than the second temperature. The method removes AlFx cleaning residue.

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